component

HMDFN2C051US

Public Made by Adom

by adom

HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 12d ago
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hmdfn2c051us-etched.step hmdfn2c051us: factory component page (tier=lcsc) · Ray 12d ago
hmdfn2c051us-hero.glb hmdfn2c051us: hero GLB from the etched model (keeps the MPN mark) · Ray 12d ago
hmdfn2c051us-hero.overlay.json Publish 0.1.0 · Ray 12d ago
hmdfn2c051us.glb Publish 0.1.0 · Ray 12d ago
hmdfn2c051us.kicad_mod Publish 0.1.0 · Ray 12d ago
hmdfn2c051us.kicad_sym hmdfn2c051us: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hmdfn2c051us.lbr hmdfn2c051us: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hmdfn2c051us.step Publish 0.1.0 · Ray 12d ago
package.json Publish 0.1.0 · Ray 12d ago
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README.md Publish 0.1.0 · Ray 12d ago

HMDFN2C051US

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HMDFN2C051US from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bi-directional ESD protection diode, connected to the protected I/O line (working voltage 5V, VBR 6.0V min at 1mA, ±8kV contact ESD).
2 2 passive Other terminal of the bi-directional ESD protection diode, normally connected to ground (working voltage 5V, 0.5pF typical junction capacitance spec at VR=0V, 1MHz).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power PPP 100 W tp = 8/20μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
Operating Temperature Range Top -55 150 °C 1
IEC61000-4-2 (ESD) contact discharge -8 8 kV IEC 61000-4-2 contact discharge 1
IEC61000-4-2 (ESD) air discharge -15 15 kV IEC 61000-4-2 air discharge 1
IEC61000-4-4 (EFT) peak current 40 A 5/50 ns 1
Reverse Working Voltage VRWM 5 V 2
Reverse Breakdown Voltage VBR 6 V IT = 1mA 2
Reverse Leakage Current IR 0.1 μA VRWM = 5.0V 2
Clamping Voltage VC 13 V IPP = 1A, tp = 8/20μs 2
Clamping Voltage VC 25 V IPP = 4A, tp = 8/20μs 2
Junction Capacitance CJ 0.5 pF VR = 0V, f = 1MHz 2

CAD (KiCad official)

  • Symbol: HMDFN2C051US
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hmdfn2c051us-etched.step / hmdfn2c051us-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hmdfn2c051us.step / hmdfn2c051us.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 6c033ab294086a46, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF