# HMCQ4407TP

**HXY MOSFET** · MOSFETs · SOP-8

HMCQ4407TP from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (VDS rated -30V, continuous drain current -15A at TA=25℃). |
| 2 | S | passive | Source of the P-channel MOSFET (VDS rated -30V, continuous drain current -15A at TA=25℃). |
| 3 | S | passive | Source of the P-channel MOSFET (VDS rated -30V, continuous drain current -15A at TA=25℃). |
| 4 | G | input | Gate of the P-channel MOSFET, rated ±20V gate-source with threshold of -1.2V to -2.5V at ID=-250uA. |
| 5 | D | passive | Drain of the P-channel MOSFET (VDS -30V, pulsed drain current -56A, RDS(ON) below 8.7mΩ at VGS=-10V). |
| 6 | D | passive | Drain of the P-channel MOSFET (VDS -30V, pulsed drain current -56A, RDS(ON) below 8.7mΩ at VGS=-10V). |
| 7 | D | passive | Drain of the P-channel MOSFET (VDS -30V, pulsed drain current -56A, RDS(ON) below 8.7mΩ at VGS=-10V). |
| 8 | D | passive | Drain of the P-channel MOSFET (VDS -30V, pulsed drain current -56A, RDS(ON) below 8.7mΩ at VGS=-10V). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 5.8 | 8.7 | mΩ | VGS=-10V, ID=-12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8.5 | 13.5 | mΩ | VGS=-4.5V, ID=-10A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 |  | 2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | -14 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -56 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -15 | A | TA=25℃, VGS @ -10V | 1 |
| Continuous Drain Current | ID |  |  | -11 | A | TA=70℃, VGS @ -10V | 1 |
| Pulsed Drain Current | IDM |  |  | -56 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 151 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-55A | 1 |
| Avalanche Current | IAS |  |  | -55 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 1.5 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 40 | ℃/W | t≦10s | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 75 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 24 | ℃/W |  | 1 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | -0.018 |  | V/℃ | Reference to 25℃, ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | 5.04 |  | mV/℃ |  | 2 |
| Forward Transconductance | gfs |  | 25 |  | S | VDS=-5V, ID=-12A | 2 |
| Total Gate Charge (-4.5V) | Qg |  | 30 |  | nC | VDS=-15V, VGS=-4.5V, ID=-12A | 2 |
| Gate-Source Charge | Qgs |  | 10 |  | nC | VDS=-15V, VGS=-4.5V, ID=-12A | 2 |
| Gate-Drain Charge | Qgd |  | 10.4 |  | nC | VDS=-15V, VGS=-4.5V, ID=-12A | 2 |
| Turn-On Delay Time | Td(on) |  | 9.4 |  | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 |
| Rise Time | Tr |  | 10.2 |  | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 |
| Turn-Off Delay Time | Td(off) |  | 117 |  | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 |
| Fall Time | Tf |  | 24 |  | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 2 |
| Input Capacitance | Ciss |  | 3448 |  | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 508 |  | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 421 |  | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Reverse Recovery Time | trr |  | 19.4 |  | nS | IF=-10A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  | 9.1 |  | nC | IF=-10A, dI/dt=100A/µs, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HMCQ4407TP`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hmcq4407tp-etched.step` / `hmcq4407tp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hmcq4407tp.step` / `hmcq4407tp.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hmcq4407tp-datasheet.pdf) (6 pp, sha256 `67e647f387a5c1ec`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hmcq4407tp-datasheet.pdf)