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HMCAC10H03ATP

Public Made by Adom

by adom

HXY MOSFET MOSFETs, DFN-8L(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HMCAC10H03ATP

HXY MOSFET · MOSFETs · DFN-8L(5x6)

HMCAC10H03ATP from HXY MOSFET, in a DFN-8L(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; pin 1 is marked on the package and is one of three source pins tied together.
2 S passive Source of the N-channel MOSFET, one of three source pins tied together.
3 S passive Source of the N-channel MOSFET, one of three source pins tied together.
4 G input Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20V and operation at gate voltages as low as 4.5V.
5 D passive Drain of the N-channel MOSFET (VDS 30V max), one of four drain pins tied together.
6 D passive Drain of the N-channel MOSFET (VDS 30V max), one of four drain pins tied together.
7 D passive Drain of the N-channel MOSFET (VDS 30V max), one of four drain pins tied together.
8 D passive Drain of the N-channel MOSFET (VDS 30V max), one of four drain pins tied together.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN-8L(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.4 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 3.2 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 150 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V Printed as ±20 V 1
Continuous Drain Current ID 150 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID 80 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM 160 A Note 2 1
Single Pulse Avalanche Energy EAS 180 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=60A (note 3) 1
Avalanche Current IAS 60 A 1
Total Power Dissipation PD 187 W TC=25℃ (note 4) 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 1.1 ℃/W Note 1 1

CAD (KiCad official)

  • Symbol: HMCAC10H03ATP
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8L(5x6) (KiCad packages3D, STEP)
  • 3D model files: hmcac10h03atp-etched.step / hmcac10h03atp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hmcac10h03atp.step / hmcac10h03atp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 769a5a28464f61c8, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF