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HM4622A-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HM4622A-VB

VBsemi Elec · MOSFETs · SO-8

HM4622A-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30 V, 0.011 Ω at VGS = 10 V).
2 G1 input Gate of the N-channel MOSFET, rated for VGS of ±20 V.
3 S2 passive Source of the P-channel MOSFET (-30 V, 0.021 Ω at VGS = -10 V).
4 G2 input Gate of the P-channel MOSFET, rated for VGS of ±20 V.
5 D2 passive Drain of the P-channel MOSFET, rated for VDS of -30 V; pins 5 and 6 are both D2.
6 D2 passive Drain of the P-channel MOSFET, rated for VDS of -30 V; pins 5 and 6 are both D2.
7 D1 passive Drain of the N-channel MOSFET, rated for VDS of 30 V; pins 7 and 8 are both D1.
8 D1 passive Drain of the N-channel MOSFET, rated for VDS of 30 V; pins 7 and 8 are both D1.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage N-Ch VDS 30 V N-Channel, TA = 25 °C 1
Drain-Source Voltage P-Ch VDS -30 V P-Channel, TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V N and P channel 1
Pulsed Drain Current N-Ch IDM 60 A 10 µs pulse width, N-Channel 1
Pulsed Drain Current P-Ch IDM -60 A 10 µs pulse width, P-Channel 1
Pulsed Source-Drain Current N-Ch ISM 60 A N-Channel 1
Pulsed Source-Drain Current P-Ch ISM -60 A P-Channel 1
Single Pulse Avalanche Current N-Ch IAS 20 A L = 0.1 mH, N-Channel 1
Single Pulse Avalanche Current P-Ch IAS -20 A L = 0.1 mH, P-Channel 1
Single Pulse Avalanche Energy EAS 520 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 3 W TA = 25 °C, b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance N-Ch RthJA 20 32.5 °C/W t ≤ 10 s, N-Channel 1
Junction-to-Ambient Thermal Resistance P-Ch RthJA 27 32.5 °C/W t ≤ 10 s, P-Channel 1
Junction-to-Foot Thermal Resistance N-Ch RthJF 10 20 °C/W Steady state, N-Channel 1
Junction-to-Foot Thermal Resistance P-Ch RthJF 19 28 °C/W Steady state, P-Channel 1
Drain-Source Breakdown Voltage N-Ch VDS 30 V VGS = 0 V, ID = 250 µA, N-Ch 2
Drain-Source Breakdown Voltage P-Ch VDS -30 V VGS = 0 V, ID = -250 µA, P-Ch 2
Gate Threshold Voltage N-Ch VGS(th) 1 2.2 V VDS = VGS, ID = 250 µA, N-Ch 2
Gate Threshold Voltage P-Ch VGS(th) -0.9 -2.5 V VDS = VGS, ID = -250 µA, P-Ch 2
Gate-Body Leakage N-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V, N-Ch 2
Gate-Body Leakage P-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V, P-Ch 2
Zero Gate Voltage Drain Current N-Ch IDSS 1 µA VDS = 30 V, VGS = 0 V, N-Ch 2
Zero Gate Voltage Drain Current P-Ch IDSS -1 µA VDS = -30 V, VGS = 0 V, P-Ch 2
Zero Gate Voltage Drain Current N-Ch hot IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Ch 2
Zero Gate Voltage Drain Current P-Ch hot IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C, P-Ch 2
On-State Drain Current N-Ch ID(on) 40 A VDS = 5 V, VGS = 10 V, N-Ch 2
On-State Drain Current P-Ch ID(on) -40 A VDS = -5 V, VGS = -10 V, P-Ch 2
Gate Resistance N-Ch Rg 0.3 1.3 2.6 Ω f = 1 MHz, N-Ch 2
Gate Resistance P-Ch Rg 1.3 6.4 12.8 Ω f = 1 MHz, P-Ch 2
Total Gate Charge N-Ch Qg 13.3 20 nC VDS = 20 V, VGS = 10 V, ID = 10 A, N-Ch 2
Total Gate Charge P-Ch Qg 13 20 nC VDS = -20 V, VGS = -10 V, ID = -10 A, P-Ch 2
Total Gate Charge N-Ch 4.5 V Qg 6.5 10 nC VDS = 20 V, VGS = 4.5 V, ID = 10 A, N-Ch 2
Total Gate Charge P-Ch 4.5 V Qg 21.7 33 nC VDS = -20 V, VGS = -4.5 V, ID = -10 A, P-Ch 2
Drain-Source On-State Resistance N-Ch 10 V RDS(on) 0.011 Ω VGS = 10 V, ID = 6.8 A, N-Ch 2
Drain-Source On-State Resistance P-Ch 10 V RDS(on) 0.021 Ω VGS = -10 V, ID = -8 A, P-Ch 2
Drain-Source On-State Resistance N-Ch 4.5 V RDS(on) 0.013 Ω VGS = 4.5 V, ID = 6.6 A, N-Ch 2
Drain-Source On-State Resistance P-Ch 4.5 V RDS(on) 0.028 Ω VGS = -4.5 V, ID = -5 A, P-Ch 2
Forward Transconductance N-Ch gfs 37 S VDS = 15 V, ID = 6.8 A, N-Ch 2
Forward Transconductance P-Ch gfs 35 S VDS = -15 V, ID = -6.7 A, P-Ch 2
Turn-On Delay Time P-Ch 10 V td(on) 10 20 ns VDD = -20 V, RL = 2 Ω, VGEN = -10 V, Rg = 1 Ω, P-Ch 3
Rise Time P-Ch 10 V tr 9 18 ns VDD = -20 V, RL = 2 Ω, VGEN = -10 V, Rg = 1 Ω, P-Ch 3
Turn-Off Delay Time P-Ch 10 V td(off) 50 90 ns VDD = -20 V, RL = 2 Ω, VGEN = -10 V, Rg = 1 Ω, P-Ch 3
Fall Time P-Ch 10 V tf 13 26 ns VDD = -20 V, RL = 2 Ω, VGEN = -10 V, Rg = 1 Ω, P-Ch 3
Body Diode Voltage N-Ch VSD 0.81 1.2 V IS = 5.4 A, N-Ch 3
Body Diode Voltage P-Ch VSD -0.77 -1.2 V IS = -2 A, P-Ch 3
Body Diode Reverse Recovery Time P-Ch trr 41 80 ns IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C, P-Ch 3
Body Diode Reverse Recovery Charge P-Ch Qrr 32 65 nC IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C, P-Ch 3

CAD (KiCad official)

  • Symbol: HM4622A-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: hm4622a-vb-etched.step / hm4622a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hm4622a-vb.step / hm4622a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 4c2c93df0aa3356a, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF