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HM4611A-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HM4611A-VB

VBsemi Elec · MOSFETs · SO-8

HM4611A-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (60 V VDS rating, 0.015 Ω RDS(on) max at VGS = 10 V).
2 G1 input Gate of the N-channel MOSFET, with a ±20 V maximum gate-source voltage.
3 S2 passive Source of the P-channel MOSFET (-60 V VDS rating, 0.017 Ω RDS(on) max at VGS = -10 V).
4 G2 input Gate of the P-channel MOSFET, with a ±20 V maximum gate-source voltage.
5 D2 passive Drain of the P-channel MOSFET, internally tied to pin 6 (-60 V VDS rating).
6 D2 passive Drain of the P-channel MOSFET, internally tied to pin 5 (-60 V VDS rating).
7 D1 passive Drain of the N-channel MOSFET, internally tied to pin 8 (60 V VDS rating).
8 D1 passive Drain of the N-channel MOSFET, internally tied to pin 7 (60 V VDS rating).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage N-Ch VGS -20 20 V N-Channel 1
Gate-Source Voltage P-Ch VGS -20 20 V P-Channel 1
Drain-Source Voltage N-Ch VDS 60 V N-Channel 1
Drain-Source Voltage P-Ch VDS -60 V P-Channel 1
Single Pulse Avalanche Current N-Ch IAS 20 A L = 0.1 mH 1
Single Pulse Avalanche Current P-Ch IAS -20 A L = 0.1 mH 1
Source-Drain Diode Current N-Ch IS 3.6 A TC = 25 °C 1
Source-Drain Diode Current P-Ch IS -3.6 A TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient N-Ch RthJA 20 32.5 °C/W t ≤ 10 s, N-Channel 1
Junction-to-Ambient P-Ch RthJA 27 32.5 °C/W t ≤ 10 s, P-Channel 1
Junction-to-Foot N-Ch RthJF 10 20 °C/W Steady State, N-Channel 1
Junction-to-Foot P-Ch RthJF 19 28 °C/W Steady State, P-Channel 1
Gate Threshold Voltage N-Ch VGS(th) 1 2.2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage P-Ch VGS(th) -0.9 -2.5 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage N-Ch IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Gate-Body Leakage P-Ch IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current N-Ch IDSS 1 µA VGS = 0 V 2
Zero Gate Voltage Drain Current P-Ch IDSS -1 µA VGS = 0 V 2
Zero Gate Voltage Drain Current N-Ch hot IDSS 10 µA VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current P-Ch hot IDSS -10 µA VGS = 0 V, TJ = 55 °C 2
Total Gate Charge N-Ch 10 V Qg 13.3 20 nC VDS = 20 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge P-Ch 10 V Qg 13 20 nC VDS = - 20 V, VGS = - 10 V, ID = - 10 A 2
Total Gate Charge N-Ch 4.5 V Qg 6.5 10 nC VDS = 20 V, VGS = 4.5 V, ID = 10 A 2
Total Gate Charge P-Ch 4.5 V Qg 21.7 33 nC VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A 2
Gate Resistance N-Ch Rg 0.3 1.3 2.6 Ω f = 1 MHz 2
Gate Resistance P-Ch Rg 1.3 6.4 12.8 Ω f = 1 MHz 2
Turn-On Delay Time N-Ch td(on) 5 10 ns VDD = 20 V, RL = 3.7 Ω, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time P-Ch td(on) 10 20 ns VDD = - 20 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω 3
Rise Time N-Ch tr 10 20 ns VDD = 20 V, RL = 3.7 Ω, VGEN = 10 V, Rg = 1 Ω 3
Rise Time P-Ch tr 9 18 ns VDD = - 20 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω 3
Turn-Off Delay Time N-Ch td(off) 16 25 ns VDD = 20 V, RL = 3.7 Ω, VGEN = 10 V, Rg = 1 Ω 3
Turn-Off Delay Time P-Ch td(off) 50 90 ns VDD = - 20 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω 3
Fall Time N-Ch tf 7 14 ns VDD = 20 V, RL = 3.7 Ω, VGEN = 10 V, Rg = 1 Ω 3
Fall Time P-Ch tf 13 26 ns VDD = - 20 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω 3
Body Diode Voltage N-Ch VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage P-Ch VSD -0.77 -1.2 V IS = - 2 A 3
Body Diode Reverse Recovery Time N-Ch trr 17 34 ns IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Time P-Ch trr 41 80 ns IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge N-Ch Qrr 10 20 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge P-Ch Qrr 32 65 nC IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C 3
Drain-Source On-State Resistance N-Ch 10 V RDS(on) 0.015 Ω VGS = 10 V, ID = 6.8 A 2
Drain-Source On-State Resistance P-Ch 10 V RDS(on) 0.017 Ω VGS = - 10 V, ID = - 8 A 2
Drain-Source On-State Resistance N-Ch 4.5 V RDS(on) 0.018 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance P-Ch 4.5 V RDS(on) 0.022 Ω VGS = - 4.5 V, ID = - 5 A 2

CAD (KiCad official)

  • Symbol: HM4611A-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: hm4611a-vb-etched.step / hm4611a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hm4611a-vb.step / hm4611a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 a3a63a1255110f13, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF