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HKTD15N10

Public Made by Adom

by adom

Guangdong Hottech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HKTD15N10

Guangdong Hottech · MOSFETs · TO-252

HKTD15N10 from Guangdong Hottech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS up to ±20V, with RDS(ON) max 100mΩ at VGS=10V and 110mΩ at VGS=4.5V (ID=10A).
2 D passive Drain (center lead, also the exposed tab); VDS max 100V, continuous ID 15A and pulsed IDM 60A.
3 S passive Source; body diode conducts to the drain with continuous forward current IS max 15A and VSD max 1.2V.

Key specifications

Parameter Value
Manufacturer Guangdong Hottech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 100 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 15 A VGS=10V 1
Pulsed drain current IDM 60 A 1
Power dissipation PD 34 W 1
Thermal resistance from junction to ambient RθJA 100 °C/W 1
Operating junction and storage temperature TJ,TSTG -55 150 °C 1
Single pulsed avalanche energy EAS 10 mJ VDD=20V, L=0.5mH, RG=25Ω, Starting TJ=25°C 1
Lead temperature for soldering purposes TL 260 °C 1/8'' from case for 10s 1
Drain-Source breakdown voltage V(BR)DS 100 V VGS=0V, ID=250μA 2
Zero gate voltage drain current IDSS 1 uA VDS=100V, VGS=0V 2
Gate-body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate-threshold voltage VGS(th) 1 1.8 2.5 V VDS=VGS, ID=250μA 2
Drain-source on-resistance RDS(ON) 80 100 mΩ VGS=10V, ID=10A 2
Drain-source on-resistance RDS(ON) 90 110 mΩ VGS=4.5V, ID=10A 2
Forward transconductance gFS 10 S VDS=5V, ID=10A 2
Input capacitance Ciss 800 pF VGS=0V, VDS=50V, f=1.0MHz 2
Output capacitance Coss 40 pF VGS=0V, VDS=50V, f=1.0MHz 2
Reverse transfer capacitance Crss 35 pF VGS=0V, VDS=50V, f=1.0MHz 2
Turn-on delay time td(on) 5 ns VDD=50V, ID=10A, RG=3Ω, VGS=10V 2
Turn-on rise time tr 40 ns VDD=50V, ID=10A, RG=3Ω, VGS=10V 2
Turn-off delay time td(off) 20 ns VDD=50V, ID=10A, RG=3Ω, VGS=10V 2
Turn-off fall time tf 8 ns VDD=50V, ID=10A, RG=3Ω, VGS=10V 2
Total gate charge Qg 16 nC VDS=50V, VGS=10V, ID=10A 2
Gate-source charge Qgs 3 nC VDS=50V, VGS=10V, ID=10A 2
Gate-drain charge Qgd 3.2 nC VDS=50V, VGS=10V, ID=10A 2
Diode forward voltage VSD 1.2 V IS=15A, VGS=0V 2
Max. forward current (diode) IS 15 A 2
Pulsed drain-source diode forward current ISM 60 A 2

CAD (KiCad official)

  • Symbol: HKTD15N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: hktd15n10-etched.step / hktd15n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hktd15n10.step / hktd15n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Guangdong Hottech datasheet (5 pp, sha256 97cc3ab106c29766, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF