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HIPD30N03S4L09ATMA1

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshipd30n03s4l09atma1factory-2.0.0extractor-text

Verified HIPD30N03S4L09ATMA1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HIPD30N03S4L09ATMA1 · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-3hqincpi/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ hipd30n03s4l09atma1.kicad_sym✓ hipd30n03s4l09atma1.kicad_mod✓ hipd30n03s4l09atma1.step
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3D Model

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Symbol & Footprint

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Contents

README

markdown

HIPD30N03S4L09ATMA1

HXY MOSFET · MOSFETs · TO-252-2L

HIPD30N03S4L09ATMA1 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with VGS rated ±20 V maximum and RDS(ON) specified at VGS=10V and 4.5V.
2 D passive Drain of the N-channel MOSFET, rated VDS = 30 V and continuous ID = 100 A at TC=25℃.
3 S passive Source of the N-channel MOSFET, with continuous body-diode source current IS of 80 A maximum.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 3.8 5.5 mΩ VGS=10V , ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 7.5 9 mΩ VGS=4.5V , ID=15A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Resistance Rg 1.7 3.4 Ω VDS=0V , VGS=0V , f=1MHz 2
Continuous Source Current IS 80 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 160 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ 100 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 57 A VGS @ 10V 1
Pulsed Drain Current IDM 160 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 115.2 mJ TC=25℃ 1
Avalanche Current IAS 48 A TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 53 W 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W t ≤10s 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△TJ 0.028 V/℃ Reference to 25℃ , ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -6.16 mV/℃ 2
Forward Transconductance gfs 22 S VDS=5V , ID=30A 2
Total Gate Charge (4.5V) Qg 20 nC VDS=15V , VGS=4.5V , ID=15A 2
Input Capacitance Ciss 2295 pF VDS=15V , VGS=0V , f=1MHz 2

CAD (KiCad official)

  • Symbol: HIPD30N03S4L09ATMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hipd30n03s4l09atma1-etched.step / hipd30n03s4l09atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hipd30n03s4l09atma1.step / hipd30n03s4l09atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 6d9f4d0a2359ceb9, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF