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README

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HIP4081AIBZT

Intersil(Renesas Electronics) · Gate Drive ICs · SOIC-20-300mil

HIP4081AIBZT from Intersil(Renesas Electronics), in a SOIC-20-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BHB power_in B high-side bootstrap supply; connect bootstrap diode cathode and bootstrap capacitor positive side here, internal charge pump supplies 30µA and clamps to approximately 12.8V.
2 BHI input B high-side logic input controlling BHO; overridden by BLI high and DIS high, drivable from 0V to 15V (no greater than VDD).
3 DIS input Disable input; when high sets all four outputs low and overrides all other inputs, drivable from 0V to 15V (no greater than VDD).
4 VSS power_in Chip negative supply, generally ground.
5 BLI input B low-side logic input controlling BLO; if BHI is high or not connected BLI controls both BLO and BHO with dead time set by HDEL and LDEL, drivable from 0V to 15V (no greater than VDD).
6 ALI input A low-side logic input controlling ALO; if AHI is high or not connected ALI controls both ALO and AHO with dead time set by HDEL and LDEL, drivable from 0V to 15V (no greater than VDD).
7 AHI input A high-side logic input controlling AHO; overridden by ALI high and DIS high, drivable from 0V to 15V (no greater than VDD).
8 HDEL passive High-side turn-on delay; connect resistor to VSS to set turn-on delay of both high-side drivers, reference voltage approximately 5.1V.
9 LDEL passive Low-side turn-on delay; connect resistor to VSS to set turn-on delay of both low-side drivers, reference voltage approximately 5.1V.
10 AHB power_in A high-side bootstrap supply; connect bootstrap diode cathode and bootstrap capacitor positive side here, internal charge pump supplies 30µA and clamps to approximately 12.8V.
11 AHO output A high-side output; connect to gate of A high-side power MOSFET.
12 AHS passive A high-side source connection; connect to source of A high-side power MOSFET and negative side of bootstrap capacitor.
13 ALO output A low-side output; connect to gate of A low-side power MOSFET.
14 ALS passive A low-side source connection; connect to source of A low-side power MOSFET.
15 VCC power_in Positive supply to gate drivers; must be same potential as VDD and connected to anodes of two bootstrap diodes.
16 VDD power_in Positive supply to lower gate drivers; must be same potential as VCC and decoupled to VSS.
17 BLS passive B low-side source connection; connect to source of B low-side power MOSFET.
18 BLO output B low-side output; connect to gate of B low-side power MOSFET.
19 BHS passive B high-side source connection; connect to source of B high-side power MOSFET and negative side of bootstrap capacitor.
20 BHO output B high-side output; connect to gate of B high-side power MOSFET.

Key specifications

Parameter Value
Manufacturer Intersil(Renesas Electronics)
Package SOIC-20-300mil
Category Power Management ICs
Pins 20

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VDD and VCC (abs max) VDD, VCC -0.3 16 V relative to VSS 4
Voltage on AHS, BHS (25°C to 125°C) VAHS, VBHS -6 80 V -6.0V transient; 25°C to 125°C 4
Voltage on AHS, BHS (-55°C to 125°C) VAHS, VBHS -6 70 V -6.0V transient; -55°C to 125°C 4
Voltage on ALS, BLS (abs max) VALS, VBLS -2 2 V transient 4
Input Current, HDEL and LDEL (abs max) -5 0 mA 4
Phase Slew Rate 20 V/ns 4
Storage Temperature Range -65 150 °C 4
Operating Max. Junction Temperature TJ 125 °C 4
Lead Temperature (Soldering 10s) 300 °C SOIC lead tips only 4
Thermal Resistance Junction-Ambient, SOIC θJA 85 °C/W typical; mounted on evaluation PC board in free air 4
Supply Voltage VDD and VCC (operating) VDD, VCC 9.5 15 V 4
Voltage on ALS, BLS (operating) VALS, VBLS -1 1 V 4
Voltage on AHB, BHB (operating) VAHB, VBHB 5 15 V relative to VAHS, BHS: VAHS,BHS +5V to +15V 4
Input Current, HDEL and LDEL (operating) -500 -50 µA 4
Operating Ambient Temperature Range TA -40 85 °C 4
VDD Quiescent Current IDD 8.5 10.5 14.5 mA All inputs = 0V; TJ=25°C 4
VDD Quiescent Current (full temp) IDD 7.5 14.5 mA All inputs = 0V; TJS=-40°C to 125°C 4
VDD Operating Current IDDO 9.5 12.5 15.5 mA Outputs switching f = 500kHz; TJ=25°C 4
VDD Operating Current (full temp) IDDO 8.5 15.5 mA Outputs switching f = 500kHz; TJS=-40°C to 125°C 4
VCC Quiescent Current ICC 0.1 10 µA All Inputs = 0V, IALO = IBLO = 0; TJ=25°C 4
VCC Quiescent Current (full temp) ICC 20 µA All Inputs = 0V, IALO = IBLO = 0; TJS=-40°C to 125°C 4
VCC Operating Current ICCO 1 1.25 2 mA f = 500kHz, No Load; TJ=25°C 4
AHB, BHB Quiescent Current - Qpump Output Current IAHB, IBHB -50 -30 -11 µA All Inputs = 0V, IAHO = IBHO = 0, VDD = VCC = VAHB = VBHB = 10V; TJ=25°C 4
AHB, BHB Operating Current IAHBO, IBHBO 0.6 1.2 1.5 mA f = 500kHz, No Load; TJ=25°C 4
AHS, BHS, AHB, BHB Leakage Current IHLK 0.02 1 µA VBHS = VAHS = 80V, VAHB = VBHB = 93V; TJ=25°C 4
AHB-AHS, BHB-BHS Qpump Output Voltage VAHB-VAHS, VBHB-VBHS 11.5 12.6 14 V IAHB = IAHB = 0, No Load; TJ=25°C 4
Low Level Input Voltage VIL 1 V Full Operating Conditions; TJ=25°C 4
Low Level Input Voltage (full temp) VIL 0.8 V Full Operating Conditions; TJS=-40°C to 125°C 4
High Level Input Voltage VIH 2.5 V Full Operating Conditions; TJ=25°C 4
High Level Input Voltage (full temp) VIH 2.7 V Full Operating Conditions; TJS=-40°C to 125°C 4
Input Voltage Hysteresis 35 mV TJ=25°C 4
Low Level Input Current IIL -130 -100 -75 µA VIN = 0V, Full Operating Conditions; TJ=25°C 4
Low Level Input Current (full temp) IIL -135 -65 µA VIN = 0V, Full Operating Conditions; TJS=-40°C to 125°C 4
High Level Input Current IIH -1 1 µA VIN = 5V, Full Operating Conditions; TJ=25°C 4
LDEL, HDEL Voltage VHDEL, VLDEL 4.9 5.1 5.3 V IHDEL = ILDEL = -100µA; TJ=25°C 4
Low Level Output Voltage VOL 0.7 0.85 1 V IOUT = 100mA; TJ=25°C 4
Low Level Output Voltage (full temp) VOL 0.5 1.1 V IOUT = 100mA; TJS=-40°C to 125°C 4
High Level Output Voltage VCC-VOH 0.8 0.95 1.1 V IOUT = -100mA; TJ=25°C 4
High Level Output Voltage (full temp) VCC-VOH 0.5 1.2 V IOUT = -100mA; TJS=-40°C to 125°C 4
Peak Pullup Current IO+ 1.7 2.6 3.8 A VOUT = 0V; TJ=25°C 4
Peak Pulldown Current IO- 1.7 2.4 3.3 A VOUT = 12V; TJ=25°C 5
Undervoltage, Rising Threshold UV+ 8.1 8.8 9.4 V TJ=25°C 5
Undervoltage, Rising Threshold (full temp) UV+ 8 9.5 V TJS=-40°C to 125°C 5
Undervoltage, Falling Threshold UV- 7.6 8.3 8.9 V TJ=25°C 5
Undervoltage, Falling Threshold (full temp) UV- 7.5 9 V TJS=-40°C to 125°C 5
Undervoltage, Hysteresis HYS 0.25 0.4 0.65 V TJ=25°C 5
Lower Turn-off Propagation Delay TLPHL 30 60 ns ALI-ALO, BLI-BLO; RHDEL = RLDEL = 10K, CL = 1000pF; TJ=25°C 5
Upper Turn-off Propagation Delay THPHL 35 70 ns AHI-AHO, BHI-BHO; RHDEL = RLDEL = 10K, CL = 1000pF; TJ=25°C 5
Lower Turn-on Propagation Delay TLPLH 45 70 ns ALI-ALO, BLI-BLO; RHDEL = RLDEL = 10K; TJ=25°C 5
Upper Turn-on Propagation Delay THPLH 60 90 ns AHI-AHO, BHI-BHO; RHDEL = RLDEL = 10K; TJ=25°C 5
Rise Time TR 10 25 ns CL = 1000pF; TJ=25°C 5
Fall Time TF 10 25 ns CL = 1000pF; TJ=25°C 5
Turn-on Input Pulse Width TPWIN-ON 50 ns RHDEL = RLDEL = 10K; TJ=25°C 5
Turn-off Input Pulse Width TPWIN-OFF 40 ns RHDEL = RLDEL = 10K; TJ=25°C 5
Turn-on Output Pulse Width TPWOUT-ON 40 ns RHDEL = RLDEL = 10K; TJ=25°C 5
Turn-off Output Pulse Width TPWOUT-OFF 30 ns RHDEL = RLDEL = 10K; TJ=25°C 5
Disable Turn-off Propagation Delay (Lower Outputs) TDISLOW 45 75 ns DIS - Lower Outputs; TJ=25°C 5
Disable Turn-off Propagation Delay (Upper Outputs) TDISHIGH 55 85 ns DIS - Upper Outputs; TJ=25°C 5
Disable to Lower Turn-on Propagation Delay TDLPLH 40 70 ns DIS - ALO and BLO; TJ=25°C 5
Refresh Pulse Width (ALO and BLO) TREF-PW 240 410 550 ns TJ=25°C 5
Disable to Upper Enable TUEN 450 620 ns DIS - AHO and BHO; TJ=25°C 5

CAD (KiCad official)

  • Symbol: HIP4081AIBZT
  • Footprint: Package_SO:SOIC-20W_7.5x12.8mm_P1.27mm
  • 3D model: SOIC-20-300mil (KiCad packages3D, STEP)
  • 3D model files: hip4081aibzt-etched.step / hip4081aibzt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hip4081aibzt.step / hip4081aibzt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Intersil(Renesas Electronics) datasheet (17 pp, sha256 9712192314428f32, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF