Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HIP2101IBZ

RENESAS · Pre-ordered Chips · SOIC-8

HIP2101IBZ from RENESAS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD power_in Positive supply to the lower gate driver, to be decoupled to VSS, with the on-chip bootstrap diode connected to HB; recommended 9V to 14V.
2 HB power_in High-side bootstrap supply requiring an external bootstrap capacitor whose positive side connects here, with the bootstrap diode on-chip.
3 HO output High-side output that connects to the gate of the high-side power MOSFET.
4 HS passive High-side source connection to the source of the high-side power MOSFET and the negative side of the bootstrap capacitor, recommended -1V to 100V.
5 HI input High-side logic input with TTL/CMOS thresholds (VIL 0.8V min, VIH 2.2V max) and an internal pulldown, absolute maximum -0.3V to 7.0V.
6 LI input Low-side logic input with TTL/CMOS thresholds (VIL 0.8V min, VIH 2.2V max) and an internal pulldown, absolute maximum -0.3V to 7.0V.
7 VSS power_in Chip negative supply, generally ground.
8 LO output Low-side output that connects to the gate of the low-side power MOSFET, with 2A typical peak pullup and pulldown current.

Key specifications

Parameter Value
Manufacturer RENESAS
Package SOIC-8
Category Interface ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD Quiescent Current IDD 0.3 0.45 mA LI = HI = 0V, TJ = 25°C 5
VDD Quiescent Current IDD 0.6 mA LI = HI = 0V, TJ = -40°C to 125°C 5
VDD Operating Current IDDO 1.7 3 mA f = 500kHz, TJ = 25°C 5
VDD Operating Current IDDO 3.4 mA f = 500kHz, TJ = -40°C to 125°C 5
Total HB Quiescent Current IHB 0.1 0.15 mA LI = HI = 0V, TJ = 25°C 5
Total HB Quiescent Current IHB 0.2 mA LI = HI = 0V, TJ = -40°C to 125°C 5
Total HB Operating Current IHBO 1.5 2.5 mA f = 500kHz, TJ = 25°C 5
Total HB Operating Current IHBO 3 mA f = 500kHz, TJ = -40°C to 125°C 5
HB to VSS Current, Quiescent IHBS 0.05 1.5 µA VHS = VHB = 114V, TJ = 25°C 5
HB to VSS Current, Quiescent IHBS 10 µA VHS = VHB = 114V, TJ = -40°C to 125°C 5
HB to VSS Current, Operating IHBSO 0.7 mA f = 500kHz, TJ = 25°C 5
Low Level Input Voltage Threshold VIL 0.8 1.65 V TJ = 25°C 5
Low Level Input Voltage Threshold VIL 0.8 V TJ = -40°C to 125°C 5
High Level Input Voltage Threshold VIH 1.65 2.2 V TJ = 25°C 5
High Level Input Voltage Threshold VIH 2.2 V TJ = -40°C to 125°C 5
Input Pulldown Resistance RI 200 kΩ TJ = 25°C 5
Input Pulldown Resistance RI 100 500 kΩ TJ = -40°C to 125°C 5
VDD Rising Threshold VDDR 7 7.3 7.8 V TJ = 25°C 5
VDD Rising Threshold VDDR 6.5 8 V TJ = -40°C to 125°C 5
VDD Threshold Hysteresis VDDH 0.5 V TJ = 25°C 5
HB Rising Threshold VHBR 6.5 6.9 7.5 V TJ = 25°C 5
HB Rising Threshold VHBR 6 8 V TJ = -40°C to 125°C 5
HB Threshold Hysteresis VHBH 0.4 V TJ = 25°C 5
Bootstrap Diode Low-Current Forward Voltage VDL 0.45 0.7 V IVDD-HB = 100µA, TJ = 25°C 6
Bootstrap Diode Low-Current Forward Voltage VDL 0.7 V IVDD-HB = 100µA, TJ = -40°C to 125°C 6
Bootstrap Diode High-Current Forward Voltage VDH 0.7 0.92 V IVDD-HB = 100mA, TJ = 25°C 6
Bootstrap Diode High-Current Forward Voltage VDH 1 V IVDD-HB = 100mA, TJ = -40°C to 125°C 6
Bootstrap Diode Dynamic Resistance RD 0.8 1 Ω IVDD-HB = 100mA, TJ = 25°C 6
Bootstrap Diode Dynamic Resistance RD 1.5 Ω IVDD-HB = 100mA, TJ = -40°C to 125°C 6
LO Low Level Output Voltage VOLL 0.25 0.3 V ILO = 100mA, TJ = 25°C 6
LO Low Level Output Voltage VOLL 0.4 V ILO = 100mA, TJ = -40°C to 125°C 6
LO High Level Output Voltage VOHL 0.25 0.3 V ILO = -100mA, VOHL = VDD-VLO, TJ = 25°C 6
LO High Level Output Voltage VOHL 0.4 V ILO = -100mA, VOHL = VDD-VLO, TJ = -40°C to 125°C 6
LO Peak Pullup Current IOHL 2 A VLO = 0V, TJ = 25°C 6
LO Peak Pulldown Current IOLL 2 A VLO = 12V, TJ = 25°C 6
HO Low Level Output Voltage VOLH 0.25 0.3 V IHO = 100mA, TJ = 25°C 6
HO Low Level Output Voltage VOLH 0.4 V IHO = 100mA, TJ = -40°C to 125°C 6
HO High Level Output Voltage VOHH 0.25 0.3 V IHO = -100mA, VOHH = VHB-VHO, TJ = 25°C 6
HO High Level Output Voltage VOHH 0.4 V IHO = -100mA, VOHH = VHB-VHO, TJ = -40°C to 125°C 6
HO Peak Pullup Current IOHH 2 A VHO = 0V, TJ = 25°C 6
HO Peak Pulldown Current IOLH 2 A VHO = 12V, TJ = 25°C 6
Lower Turn-Off Propagation Delay (LI Falling to LO Falling) tLPHL 25 43 ns TJ = 25°C 6
Lower Turn-Off Propagation Delay (LI Falling to LO Falling) tLPHL 56 ns TJ = -40°C to 125°C 6
Upper Turn-Off Propagation Delay (HI Falling to HO Falling) tHPHL 25 43 ns TJ = 25°C 6
Upper Turn-Off Propagation Delay (HI Falling to HO Falling) tHPHL 56 ns TJ = -40°C to 125°C 6
Lower Turn-On Propagation Delay (LI Rising to LO Rising) tLPLH 25 43 ns TJ = 25°C 6
Lower Turn-On Propagation Delay (LI Rising to LO Rising) tLPLH 56 ns TJ = -40°C to 125°C 6
Upper Turn-On Propagation Delay (HI Rising to HO Rising) tHPLH 25 43 ns TJ = 25°C 6
Upper Turn-On Propagation Delay (HI Rising to HO Rising) tHPLH 56 ns TJ = -40°C to 125°C 6
Delay Matching: Lower Turn-On and Upper Turn-Off tMON 2 13 ns TJ = 25°C 6
Delay Matching: Lower Turn-On and Upper Turn-Off tMON 16 ns TJ = -40°C to 125°C 6
Delay Matching: Lower Turn-Off and Upper Turn-On tMOFF 2 13 ns TJ = 25°C 6
Delay Matching: Lower Turn-Off and Upper Turn-On tMOFF 16 ns TJ = -40°C to 125°C 6
Either Output Rise/Fall Time (3V to 9V) tR,tF 0.5 0.6 us CL = 0.1µF, TJ = 25°C 6
Either Output Rise/Fall Time (3V to 9V) tR,tF 0.8 us CL = 0.1µF, TJ = -40°C to 125°C 6
Minimum Input Pulse Width that Changes the Output tPW 50 ns TJ = -40°C to 125°C 6
Either Output Rise/Fall Time tRC,tFC 10 ns CL = 1000pF, TJ = 25°C 6
Supply Voltage VDD, VHB-VHS VDD -0.3 18 V 5
LI and HI Voltages -0.3 7 V 5
Voltage on HS (Continuous) VHS -1 110 V 5
Voltage on HB VHB 118 V 5
Storage Temperature Range -65 150 °C 5
Supply Voltage, VDD VDD 9 14 V 5
Thermal Resistance Junction to Ambient, SOIC θJA 95 °C/W SOIC, Note 6 5

CAD (KiCad official)

  • Symbol: HIP2101IBZ
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: hip2101ibz-etched.step / hip2101ibz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hip2101ibz.step / hip2101ibz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: RENESAS datasheet (15 pp, sha256 caca0b3352fe6126, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF