component
HIMZA120R040M1HXKSA1
Public Made by Adomby adom
HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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"component": {
"mpn": "HIMZA120R040M1HXKSA1",
"manufacturer": "HXY MOSFET",
"package": "TO-247-4L",
"pin_count": 4,
"category": "Silicon Carbide (SiC) Devices",
"subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/579ad1531bb517f391a3150f3886eafe.pdf",
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"distributor_links": {
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"source": "Component Ocean /api/assign-pns",
"digikey": {
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"pins": [
{
"number": "1",
"name": "Drain",
"type": "passive",
"description": "Drain terminal, also connected to the TAB; the device is rated for VDSmax 1200 V at VGS = 0 V, ID = 100 μA."
},
{
"number": "2",
"name": "Power Source",
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"description": "Power source terminal for the main drain current path, kept separate from the driver source pin as stated in the package optimization feature."
},
{
"number": "3",
"name": "Driver Source",
"type": "passive",
"description": "Dedicated driver source pin for the gate drive return, separated from the power source pin as stated in the package optimization feature."
},
{
"number": "4",
"name": "Gate",
"type": "input",
"description": "Gate input with dynamic VGS limits of -10/+25 V AC (f > 1 Hz) and static VGS limits of -5/+20 V."
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"primary_model": "claude-haiku-5-5",
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"guards": "pin_guards 0.1: passed",
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"at": "2026-11-04T12:55:43"
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