# HIDW20G120C5B

**HXY MOSFET** · SiC Diodes · TO-247-3L

HIDW20G120C5B from HXY MOSFET, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first diode (Leg 1), rated for 1200 V repetitive peak reverse voltage and 16.5 A continuous forward current per leg at TC=135°C. |
| 2 | K | passive | Common cathode of both diodes, which is also connected to the CASE (tab), with 1200 V DC blocking voltage. |
| 3 | A2 | passive | Anode of the second diode (Leg 2), rated for 1200 V repetitive peak reverse voltage and 16.5 A continuous forward current per leg at TC=135°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-3L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `HIDW20G120C5B`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files: `hidw20g120c5b-etched.step` / `hidw20g120c5b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hidw20g120c5b.step` / `hidw20g120c5b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hidw20g120c5b-datasheet.pdf) (7 pp, sha256 `85872114bcff74ed`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hidw20g120c5b-datasheet.pdf)