# HGL05T-G3-08

**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · SOT-23

HGL05T-G3-08 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Diode anode terminal of the single active unidirectional TVS diode, shown on the left of the schematic and tied to the common node at pin 3 through the filled diode. |
| 2 | 2 | passive | Terminal of the second, unfilled (grey) diode symbol in the schematic; the datasheet states the part protects one unidirectional line and gives no separate function for this pin. |
| 3 | 3 | passive | Common centre node at the diode cathode shown in the schematic, the protected line terminal of the 5V working-voltage TVS (VRWM 5V, 300W 8/20us peak pulse power). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Circuit Protection |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature Range | Tstg | -55 |  | 155 | °C |  | 1 |
| Operating Temperature Range | Top | -40 |  | 125 | °C |  | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10s | 1 |
| IEC61000-4-2 (ESD) air discharge |  | -15 |  | 15 | kV | IEC61000-4-2 (ESD) air discharge | 1 |
| IEC61000-4-2 (ESD) contact discharge |  | -10 |  | 10 | kV | IEC61000-4-2 (ESD) contact discharge | 1 |
| IEC61000-4-4 (EFT) |  |  |  | 40 | A | IEC61000-4-4 (EFT) | 1 |
| Reverse Breakdown Voltage | VBR | 6 |  |  | V | IT = 1mA | 2 |
| Reverse Working Voltage | VRWM |  |  | 5 | V |  | 2 |
| Reverse Leakage Current | IR |  |  | 1 | μA | VRWM = 5V | 2 |
| Clamping Voltage | VC |  | 9.5 | 12 | V | IRWM = 15A, tp = 8/20μs | 2 |
| Junction Capacitance | CJ |  | 1.5 |  | pF | VR = 0V, f = 1MHz | 2 |

## CAD (KiCad official)

- Symbol: `HGL05T-G3-08`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `hgl05t-g3-08-etched.step` / `hgl05t-g3-08-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hgl05t-g3-08.step` / `hgl05t-g3-08.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603011570435694592) (4 pp, sha256 `5e6b09b09966bc85`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hgl05t-g3-08-datasheet.pdf)