component
HGD032N04A
Public Made by Adomby adom
CRMICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HGD032N04A
CRMICRO · MOSFETs · TO-252
HGD032N04A from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±18 V, with threshold VGS(TH) of 1.0 V min to 2.5 V max at ID = 250µA. |
| 2 | D | passive | Drain; VDSS 40 V, continuous drain current 145 A silicon limited and 60 A package limited at TC = 25 °C, pulsed 240 A. |
| 3 | S | passive | Source; continuous body-diode source current 60 A at TC = 25 °C, pulsed 240 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | 40 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS =40V, VGS= 0V, Tj = 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS =32V, VGS= 0V, Tj = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=18V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS =-18V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 2.5 | 3.2 | mΩ | VGS=10V,ID=30A | 2 | |
| Drain-to-Source On-Resistance | RDS(ON) | 3.3 | 4.1 | mΩ | VGS=4.5V,ID=25A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 2.5 | V | VDS = VGS, ID = 250µA | 2 | |
| Continuous Source Current (Body Diode) | IS | 60 | A | TC = 25 °C | 3 | ||
| Maximum Pulsed Current (Body Diode) | ISM | 240 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=30A,VGS=0V | 3 | ||
| Drain-to-Source Voltage | VDSS | 40 | V | 1 | |||
| Continuous Drain Current | ID | 145 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current (Package Limited) | ID | 60 | A | TC = 25 °C, package limited | 1 | ||
| Continuous Drain Current | ID | 60 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 240 | A | TC = 25 °C, repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Gate-to-Source Voltage | VGS | -18 | 18 | V | 1 | ||
| Avalanche Energy | EAS | 336 | mJ | L=0.5mH,VDD=20V,Ias=36.7A Start TJ=25℃ | 1 | ||
| Power Dissipation | PD | 96 | W | TC = 25 °C | 1 | ||
| Operating Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 1.25 | ℃/W | 3 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
HGD032N04A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hgd032n04a-etched.step/hgd032n04a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hgd032n04a.step/hgd032n04a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (10 pp, sha256
3ea16b0b4f76e4d8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HGD032N04A
**CRMICRO** · MOSFETs · TO-252
HGD032N04A from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±18 V, with threshold VGS(TH) of 1.0 V min to 2.5 V max at ID = 250µA. |
| 2 | D | passive | Drain; VDSS 40 V, continuous drain current 145 A silicon limited and 60 A package limited at TC = 25 °C, pulsed 240 A. |
| 3 | S | passive | Source; continuous body-diode source current 60 A at TC = 25 °C, pulsed 240 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | 40 | | | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS | | | 1 | µA | VDS =40V, VGS= 0V, Tj = 25℃ | 2 |
| Drain to Source Leakage Current | IDSS | | | 100 | µA | VDS =32V, VGS= 0V, Tj = 125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) | | | 100 | nA | VGS=18V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) | | | -100 | nA | VGS =-18V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | | 2.5 | 3.2 | mΩ | VGS=10V,ID=30A | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | | 3.3 | 4.1 | mΩ | VGS=4.5V,ID=25A | 2 |
| Gate Threshold Voltage | VGS(TH) | 1 | | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Continuous Source Current (Body Diode) | IS | | | 60 | A | TC = 25 °C | 3 |
| Maximum Pulsed Current (Body Diode) | ISM | | | 240 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS=30A,VGS=0V | 3 |
| Drain-to-Source Voltage | VDSS | | | 40 | V | | 1 |
| Continuous Drain Current | ID | | | 145 | A | TC = 25 °C | 1 |
| Continuous Drain Current (Package Limited) | ID | | | 60 | A | TC = 25 °C, package limited | 1 |
| Continuous Drain Current | ID | | | 60 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 240 | A | TC = 25 °C, repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Gate-to-Source Voltage | VGS | -18 | | 18 | V | | 1 |
| Avalanche Energy | EAS | | | 336 | mJ | L=0.5mH,VDD=20V,Ias=36.7A Start TJ=25℃ | 1 |
| Power Dissipation | PD | | | 96 | W | TC = 25 °C | 1 |
| Operating Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 1.25 | ℃/W | | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62.5 | ℃/W | | 3 |
## CAD (KiCad official)
- Symbol: `HGD032N04A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `hgd032n04a-etched.step` / `hgd032n04a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hgd032n04a.step` / `hgd032n04a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [CRMICRO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590918675334066176) (10 pp, sha256 `3ea16b0b4f76e4d8`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hgd032n04a-datasheet.pdf)