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HFTK2314S

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HFTK2314S

HXY MOSFET · MOSFETs · SOT-23

HFTK2314S from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the gate-source voltage is rated at ±12 V (absolute maximum).
2 D passive Drain of the N-channel MOSFET; drain-source voltage is rated at 20 V and continuous drain current at 6 A (TA = 25℃).
3 S passive Source of the N-channel MOSFET; the body diode forward current is rated at 4.5 A maximum (Note 2).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 22.5 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.65 1 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 22 27 mΩ VGS=4.5V, ID=4.0 A 2
Drain-Source On-State Resistance RDS(ON) 28 40 mΩ VGS=2.5V, ID=4.5A 2
Total Gate Charge Qg 10 15 nC VDS=10V, ID=3A, VGS=4.5V 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A 2
Diode Forward Current IS 4.5 A See Note 2 (surface mounted on FR4, t ≤ 10 sec) 2
Drain-Source Voltage VDS 20 V TA=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -12 12 V Printed as ±12 V 1
Continuous Drain Current ID 6 A TA=25℃ 1
Continuous Drain Current ID 3.6 A TA=70℃ 1
Drain Current-Pulsed IDM 15 A Note 1 (repetitive, pulse width limited by max junction temperature) 1
Maximum Power Dissipation PD 1.25 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient θJA 100 ℃/W Note 2 (surface mounted on FR4 Board, t ≤ 10 sec) 1

CAD (KiCad official)

  • Symbol: HFTK2314S
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hftk2314s-etched.step / hftk2314s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hftk2314s.step / hftk2314s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 677c271eb492fedc, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF