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HFS12N60S-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HFS12N60S-VB

VBsemi Elec · MOSFETs · TO-220F

HFS12N60S-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, with VGS limited to ±30 V per the absolute maximum ratings.
2 D passive Drain terminal, rated for VDS of 650 V with continuous drain current ID of 12 A at TC = 25 °C.
3 S passive Source terminal, serving as the reference for VGS and the body diode, with continuous source-drain diode current IS of 15 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 12 A TC = 25 °C, VGS at 10 V 1
Continuous Drain Current ID 9.4 A TC = 100 °C, VGS at 10 V 1
Pulsed Drain Current IDM 45 A 1
Drain-Source Voltage Slope dV/dt 15 V/ns TJ = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Linear Derating Factor 3.6 W/°C 1
Maximum Junction-to-Ambient RthJA 60 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 0.8 °C/W 2
Drain-Source Breakdown Voltage VDS 650 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage (N) VGS(th) 3 5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20 V 2
Gate-Source Leakage IGSS -1 1 μA VGS = ±30 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
VDS Temperature Coefficient ΔVDS/TJ -0.75 V/°C Reference to 25 °C, ID = 1 mA 2
Forward Transconductance gfs 16 S VDS = 30 V, ID = 8 A 2
Effective Output Capacitance, Energy Related Co(er) 63 pF VDS = 0 V to 520 V, VGS = 0 V 2
Effective Output Capacitance, Time Related Co(tr) 213 pF 2
Gate-Drain Charge Qgd 22 nC VGS = 10 V, ID = 8 A, VDS = 520 V 2
Turn-On Delay Time td(on) 13 25 ns VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω 2
Rise Time tr 11 35 ns VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω 2
Turn-Off Delay Time td(off) 81 90 ns VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω 2
Fall Time tf 25 40 ns VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω 2
Gate Input Resistance Rg 3.5 Ω f = 1 MHz, open drain 2
Continuous Source-Drain Diode Current IS 15 A 2
Diode Forward Voltage VSD 1.5 V TJ = 25 °C, IS = 8 A, VGS = 0 V 2
Reverse Recovery Time trr 345 ns TJ = 25 °C, IF = IS = 8 A, dI/dt = 100 A/μs, VR = 400 V 2
Reverse Recovery Current IRRM 35 A TJ = 25 °C, IF = IS = 8 A, dI/dt = 100 A/μs, VR = 400 V 2

CAD (KiCad official)

  • Symbol: HFS12N60S-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 6044d8bf0ea9e7e6, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF