component

HFMMT718TA

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HFMMT718TA

HXY MOSFET · Bipolar (BJT) · SOT-23

HFMMT718TA from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; Emitter-Base voltage limit is -7 V and base current limit is -0.5 A.
2 E passive Emitter of the PNP transistor; Emitter-Base voltage limit is -7 V.
3 C passive Collector of the PNP transistor; Collector-Emitter voltage -20 V, Collector-Base voltage -20 V, collector current -1.5 A maximum.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -20 V IC=-100μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -20 V IC= -10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -7 V IE= -100μA, IC=0 2
Collector cut-off current ICBO -0.1 μA VCB=-15V, IE=0 2
Emitter cut-off current IEBO -0.1 μA VEB= -4V, IC=0 2
DC current gain hFE(1) 300 VCE= -2V, IC=-10mA 2
DC current gain hFE(3) 150 VCE=-2V, IC=-2A 2
DC current gain hFE(4) 35 VCE=-2V, IC=-4A 2
Collector-emitter saturation voltage VCE(sat) (1) -40 mV IC=-0.1A, IB=-10mA 2
Collector-emitter saturation voltage VCE(sat) (2) -200 mV IC=-1A, IB=-20mA 2
Collector-emitter saturation voltage VCE(sat) (3) -220 mV IC=-1.5A, IB=-50mA 2
Base-emitter saturation voltage VBE(sat) -1 V IC=-1.5A, IB= -50mA 2
Base-emitter voltage VBE(on) -1 V VCE=-2V, IC=-2A 2
Transition frequency fT 150 MHz VCE=-10V,IC=-50mA, f=100MHZ 2
Collector output capacitance Cob 30 pF VCB=-10V,f=1MHZ 2
Turn-on Time t(on) 40 ns 2
Turn-off Time t(off) 670 ns VCC=-10V, IC=-1A, IB1=IB2=-20mA 2
Collector-base voltage VCBO -20 V Ta=25℃ unless otherwise noted 1
Collector-emitter voltage VCEO -20 V Ta=25℃ unless otherwise noted 1
Emitter-base voltage VEBO -7 V Ta=25℃ unless otherwise noted 1
Collector current IC -1.5 A Ta=25℃ unless otherwise noted 1
Base current IB -0.5 A Ta=25℃ unless otherwise noted 1
Collector power dissipation PC 350 mW Ta=25℃ unless otherwise noted 1
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Thermal resistance from junction to ambient RΘJA 500 ℃/W 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC IB Base -0.5 A PC Collector Power Dissipation 350 1

CAD (KiCad official)

  • Symbol: HFMMT718TA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hfmmt718ta-etched.step / hfmmt718ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hfmmt718ta.step / hfmmt718ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 0e1ae2dc04508aa2, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF