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HFMMT618TA

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HFMMT618TA

HXY MOSFET · Bipolar (BJT) · SOT-23

HFMMT618TA from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; Emitter-Base voltage limited to 5 V max, base current IB up to 2 A.
2 E passive Emitter; Emitter-Base breakdown voltage V(BR)EBO is 5 V min.
3 C passive Collector; VCBO and VCEO are 20 V max, collector current IC is 2.5 A max.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 20 V IC=100μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 20 V IC=10mA, IB=0 (note 1) 1
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100μA, IC=0 1
Collector cut-off current ICBO 100 nA VCB=16V, IE=0 1
Emitter cut-off current IEBO 100 nA VEB=4V, IC=0 1
DC current gain 1 hFE(1) 200 VCE=2V, IC=10mA (note 1) 1
DC current gain 2 hFE(2) 300 VCE=2V, IC=0.2A (note 1) 1
DC current gain 3 hFE(3) 200 VCE=2V, IC=2A (note 1) 1
DC current gain 4 hFE(4) 100 VCE=2V, IC=4A (note 1) 1
Collector-emitter saturation voltage 1 VCE(sat)1 15 mV IC=0.1A, IB=10mA (note 1) 1
Collector-emitter saturation voltage 2 VCE(sat)2 150 mV IC=1A, IB=10mA (note 1) 1
Collector-emitter saturation voltage 3 VCE(sat)3 200 mV IC=2A, IB=0mA (note 1) 1
Base-emitter saturation voltage VBE(sat) 1 V IC=2A, IB=50mA (note 1) 1
Base-emitter on voltage VBE(on) 1 V IC=2A, VCE=2V (note 1) 1
Output capacitance Cob 30 pF VCB=10V, f=1MHz 1
Turn-on time t(on) 170 ns VCC=10V, IC=1A, IB1=-IB2=10mA 1
Turn-off time t(off) 400 ns VCC=10V, IC=1A, IB1=-IB2=10mA 1
Transition frequency fT 100 MHz VCE=10V, IC=50mA, f=100MHz 1
Collector-base voltage VCBO 20 V Ta=25℃ 1
Collector-emitter voltage VCEO 20 V Ta=25℃ 1
Emitter-base voltage VEBO 5 V Ta=25℃ 1
Collector current IC 2.5 A Ta=25℃ 1
Base current (listed as Collector Current) IB 2 A Ta=25℃ 1
Collector power dissipation PC 350 mW Ta=25℃ 1
Operation junction and storage temperature range TJ, Tstg -55 150 ℃ 1
Thermal resistance junction to ambient RΘJA 500 ℃/W 1

CAD (KiCad official)

  • Symbol: HFMMT618TA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hfmmt618ta-etched.step / hfmmt618ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hfmmt618ta.step / hfmmt618ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 762ca511c56d4a1b, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF