component
HFDS6679
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HFDS6679
HXY MOSFET · MOSFETs · SOP-8
HFDS6679 from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 4 | G | input | Gate terminal; the datasheet's absolute maximum VGS is ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TC=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -15 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -11 | A | VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -56 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 151 | mJ | 1 | |||
| Avalanche Current | IAS | -55 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 40 | ℃/W | t≦10s | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 75 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 5.8 | 8.7 | mΩ | VGS=-10V, ID=-12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 13.5 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | 2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -14 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -56 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HFDS6679 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hfds6679-etched.step/hfds6679-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hfds6679.step/hfds6679.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
6df29bf3a7b3c0b7, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HFDS6679
**HXY MOSFET** · MOSFETs · SOP-8
HFDS6679 from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 4 | G | input | Gate terminal; the datasheet's absolute maximum VGS is ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum VDS is -30 V and continuous ID is -15 A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | | | V | TC=25°C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TA=25℃ | -15 | | | A | VGS @ -10V | 1 |
| Continuous Drain Current | ID@TA=70℃ | -11 | | | A | VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | -56 | | | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 151 | mJ | | 1 |
| Avalanche Current | IAS | -55 | | | A | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 1.5 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 40 | ℃/W | t≦10s | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 75 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 24 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 5.8 | 8.7 | mΩ | VGS=-10V, ID=-12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 8.5 | 13.5 | mΩ | VGS=-4.5V, ID=-10A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | | 2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -14 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -56 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `HFDS6679`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hfds6679-etched.step` / `hfds6679-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hfds6679.step` / `hfds6679.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hfds6679-datasheet.pdf) (6 pp, sha256 `6df29bf3a7b3c0b7`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hfds6679-datasheet.pdf)