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HFDD4243

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshfdd4243factory-2.0.0extractor-text

Verified HFDD4243

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HFDD4243 · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-l3z29zrf/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ hfdd4243.kicad_sym✓ hfdd4243.kicad_mod✓ hfdd4243.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HFDD4243

HXY MOSFET · MOSFETs · TO-252-2L

HFDD4243 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate: gate-source voltage rated ±20V, with a typical threshold of -1.6V (-1.0 to -2.5V at ID=-250µA) and RDS(on) specified down to VGS=-4.5V.
2 D passive Drain, connected to the exposed tab (the middle lead is cut off in the 2-lead package): drain-source voltage -40V, continuous drain current -25A at TC=25°C, pulsed -40A.
3 S passive Source: the P-channel MOSFET source terminal, with continuous body-diode forward current up to -23A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ -25 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ -12 A VGS @ 10V 1
Pulsed Drain Current IDM -40 A TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 8 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 18.8 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS -40 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -40V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 31 44 mΩ VGS= -10V, ID= -8A 2
Static Drain-Source on-Resistance RDS(on) 44 60 mΩ VGS= -4.5V, ID= -5A 2
Maximum Continuous Drain to Source Diode Forward Current IS -23 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -40 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= -10A 2
Input Capacitance Ciss 1034 pF VDS= -20V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 107 pF VDS= -20V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 79.5 pF VDS= -20V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 20 nC VDS= -20V, ID= -5A, VGS= -10V 2
Gate-Source Charge Qgs 3.5 nC VDS= -20V, ID= -5A, VGS= -10V 2
Gate-Drain Charge Qgd 4.2 nC VDS= -20V, ID= -5A, VGS= -10V 2
Turn-on Delay Time td(on) 8 ns VDD= -20V, ID= -5A, VGS= -10V, RGEN=2.5Ω 2
Turn-on Rise Time tr 15 ns VDD= -20V, ID= -5A, VGS= -10V, RGEN=2.5Ω 2
Turn-off Delay Time td(off) 23 ns VDD= -20V, ID= -5A, VGS= -10V, RGEN=2.5Ω 2
Turn-off Fall Time tf 9 ns VDD= -20V, ID= -5A, VGS= -10V, RGEN=2.5Ω 2
Reverse Recovery Time trr 29 ns VGS =0V, IS=-5A, di/dt=100A/μs 2
Reverse Recovery Charge Qrr 20 nC VGS =0V, IS=-5A, di/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: HFDD4243
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hfdd4243-etched.step / hfdd4243-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hfdd4243.step / hfdd4243.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 c9af6c1e9d57cc5d, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF