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HFDD050N03B

HXY MOSFET · MOSFETs · TO-252-2

HFDD050N03B from HXY MOSFET, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage rated ±20 V and a gate threshold of 1.0 V min to 2.5 V max at 250 µA.
2 D passive Drain of the N-channel MOSFET, rated for 30 V drain-source voltage and 100 A continuous drain current at TC=25°C.
3 S passive Source of the N-channel MOSFET, with a body-diode continuous source current of 80 A max.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 3.8 5.5 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 7.5 9 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 1.7 3.4 Ω VDS=0V, VGS=0V, f=1MHz 2
Continuous Source Current IS 80 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 160 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ 100 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 57 A VGS @ 10V 1
Pulsed Drain Current IDM 160 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 115.2 mJ TC=25℃ 1
Avalanche Current IAS 48 A TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 53 W TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W t ≤10s 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△TJ 0.028 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -6.16 mV/℃ 2
Forward Transconductance gfs 22 S VDS=5V, ID=30A 2
Total Gate Charge (4.5V) Qg 20 nC VDS=15V, VGS=4.5V, ID=15A 2
Gate-Source Charge Qgs 7.6 nC VDS=15V, VGS=4.5V, ID=15A 2
Gate-Drain Charge Qgd 7.2 nC VDS=15V, VGS=4.5V, ID=15A 2
Turn-On Delay Time Td(on) 7.8 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Rise Time Tr 15 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Turn-Off Delay Time Td(off) 37.3 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Fall Time Tf 10.6 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Input Capacitance Ciss 2295 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 267 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 210 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 14 nS IF=30A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 5 nC IF=30A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HFDD050N03B
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: hfdd050n03b-etched.step / hfdd050n03b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hfdd050n03b.step / hfdd050n03b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 7309873c08ac846c, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF