component
HESDTU5V0A1
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHESDTU5V0A1
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HESDTU5V0A1 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of the bi-directional ESD protection diode protecting one I/O line, with 5.0 V reverse working voltage (VRWM) and 6.0 V minimum breakdown at 1 mA. |
| 2 | 2 | passive | Terminal 2 of the bi-directional ESD protection diode protecting one I/O line, with 5.0 V reverse working voltage (VRWM) and 6.0 V minimum breakdown at 1 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Reverse Breakdown Voltage | VBR | 6 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 0.1 | μA | VRWM = 5.0V | 2 | ||
| Clamping Voltage | VC | 13 | V | IPP = 1A, tp = 8/20μs | 2 | ||
| Clamping Voltage | VC | 25 | V | IPP = 4A, tp = 8/20μs | 2 | ||
| Junction Capacitance | CJ | 0.25 | pF | VR = 0V, f = 1MHz | 2 | ||
| TLP Clamping Voltage | VCTLP | 26 | V | IPP = 8A, IEC61000-4-2 Level 2 equivalent | 2 | ||
| TLP Clamping Voltage | VCTLP | 38 | V | IPP = 16A, IEC61000-4-2 Level 4 equivalent | 2 | ||
| Peak Pulse Power | PPP | 100 | W | tp = 8/20 μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD air discharge | -15 | 15 | kV | IEC61000-4-2 air discharge | 1 | ||
| ESD contact discharge | -8 | 8 | kV | IEC61000-4-2 contact discharge | 1 | ||
| EFT | 40 | A | IEC61000-4-4 (5/50 ns) | 1 |
CAD (KiCad official)
- Symbol:
HESDTU5V0A1 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesdtu5v0a1-etched.step/hesdtu5v0a1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesdtu5v0a1.step/hesdtu5v0a1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
f1de24fe4f675b9f, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).