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HESDNC7VB1AF-A

Public Made by Adom

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HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 24d ago
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hesdnc7vb1af-a.lbr hesdnc7vb1af-a: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hesdnc7vb1af-a.step Publish 0.1.0 · Ray 24d ago
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HESDNC7VB1AF-A

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HESDNC7VB1AF-A from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Terminal 1 of the bidirectional ESD protection line; the datasheet rates the device for IEC61000-4-2 Level 4 ESD (±15 kV contact, ±20 kV air) and IEC61000-4-4 EFT (40 A), and gives VRWM of 7.0 V.
2 2 passive Terminal 2 of the bidirectional ESD protection line; the datasheet rates the device for IEC61000-4-2 Level 4 ESD (±15 kV contact, ±20 kV air) and IEC61000-4-4 EFT (40 A), and gives VRWM of 7.0 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse working voltage VRWM 7 V 2
Reverse leakage current IR 1 uA @ VRWM 2
Breakdown voltage VBR 7.2 V @ IT = 1.0 mA, pulse test (Note 1) 2
Clamping voltage at max IPP VC 17 V @ Max IPP, surge current waveform per Figure 2 2
Peak pulse current IPP 9 A Surge current waveform per Figure 2 2
Peak pulse power PPP 130 W tp = 8/20 μs 1
Storage temperature range Tstg -55 150 °C 1
Operating temperature range Top -40 125 °C 1
Maximum junction temperature Tj 150 °C 1
ESD withstand, air discharge -20 20 KV IEC61000-4-2 (ESD), air discharge 1
ESD withstand, contact discharge -15 15 KV IEC61000-4-2 (ESD), contact discharge 1
EFT surge current 40 A IEC61000-4-4 (EFT) 1
Maximum lead temperature for soldering TL 260 °C 10 s soldering 1

CAD (KiCad official)

  • Symbol: HESDNC7VB1AF-A
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hesdnc7vb1af-a-etched.step / hesdnc7vb1af-a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hesdnc7vb1af-a.step / hesdnc7vb1af-a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 1a38712b6d0ba647, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF