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HESDNC24VB1AF-A
Public Made by Adomby adom
HXY MOSFET ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HESDNC24VB1AF-A
HXY MOSFET · ESD Protection Devices · DFN1006-2L
HESDNC24VB1AF-A from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One of the two terminals of the bi-directional ESD protection diode, which protects one line; the datasheet gives no pin-specific limit, and the device-level ratings are VRWM 24 V and peak pulse power 300 W (tp = 8/20 µs). |
| 2 | 2 | passive | The other terminal of the bi-directional ESD protection diode, which protects the same line; the datasheet gives no pin-specific limit, and the device-level ratings are VRWM 24 V and IEC61000-4-2 ±30 kV contact/air discharge. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse leakage current | IR | 0.1 | μA | @ VRWM | 2 | ||
| Breakdown voltage (minimum) | VBR | 25 | V | @ IT = 1mA, pulse test | 2 | ||
| Breakdown voltage (maximum) | VBR | 29.59 | V | @ IT = 1mA, pulse test | 2 | ||
| Clamping voltage | VC | 60 | V | @ IPP = 5A | 2 | ||
| Peak pulse power | PPP | 300 | W | tp = 8/20μs | 1 | ||
| ESD IEC61000-4-2 air discharge | -30 | 30 | kV | IEC61000-4-2 (ESD) air discharge | 1 | ||
| ESD IEC61000-4-2 contact discharge | -30 | 30 | kV | IEC61000-4-2 (ESD) contact discharge | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Operating temperature range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
HESDNC24VB1AF-A - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesdnc24vb1af-a-etched.step/hesdnc24vb1af-a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesdnc24vb1af-a.step/hesdnc24vb1af-a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
3c91fb87a0aeef85, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HESDNC24VB1AF-A
**HXY MOSFET** · ESD Protection Devices · DFN1006-2L
HESDNC24VB1AF-A from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One of the two terminals of the bi-directional ESD protection diode, which protects one line; the datasheet gives no pin-specific limit, and the device-level ratings are VRWM 24 V and peak pulse power 300 W (tp = 8/20 µs). |
| 2 | 2 | passive | The other terminal of the bi-directional ESD protection diode, which protects the same line; the datasheet gives no pin-specific limit, and the device-level ratings are VRWM 24 V and IEC61000-4-2 ±30 kV contact/air discharge. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse leakage current | IR | | | 0.1 | μA | @ VRWM | 2 |
| Breakdown voltage (minimum) | VBR | 25 | | | V | @ IT = 1mA, pulse test | 2 |
| Breakdown voltage (maximum) | VBR | | | 29.59 | V | @ IT = 1mA, pulse test | 2 |
| Clamping voltage | VC | | | 60 | V | @ IPP = 5A | 2 |
| Peak pulse power | PPP | | | 300 | W | tp = 8/20μs | 1 |
| ESD IEC61000-4-2 air discharge | | -30 | | 30 | kV | IEC61000-4-2 (ESD) air discharge | 1 |
| ESD IEC61000-4-2 contact discharge | | -30 | | 30 | kV | IEC61000-4-2 (ESD) contact discharge | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage temperature range | Tstg | -55 | | 150 | °C | | 1 |
| Operating temperature range | Top | -40 | | 125 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `HESDNC24VB1AF-A`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hesdnc24vb1af-a-etched.step` / `hesdnc24vb1af-a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesdnc24vb1af-a.step` / `hesdnc24vb1af-a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hesdnc24vb1af-a-datasheet.pdf) (4 pp, sha256 `3c91fb87a0aeef85`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hesdnc24vb1af-a-datasheet.pdf)