component
HESDLC5VB1AF-A
Public Made by Adomby adom
HXY MOSFET ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHESDLC5VB1AF-A
HXY MOSFET · ESD Protection Devices · DFN1006-2L
HESDLC5VB1AF-A from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection diode terminal with 5 V stand-off voltage, 2.5 pF typical capacitance; the device is symmetric so pin 1 and pin 2 are interchangeable. |
| 2 | 2 | passive | Bi-directional ESD protection diode terminal with 5 V stand-off voltage, 2.5 pF typical capacitance; the device is symmetric so pin 1 and pin 2 are interchangeable. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working (stand-off) voltage | VRWM | 5 | V | 2 | |||
| Reverse leakage current | IR | 1 | μA | @ VRWM | 2 | ||
| Breakdown voltage | VBR | 5.5 | V | @ IT = 1mA | 2 | ||
| Clamping voltage | VC | 8.5 | V | @ IPP = 1A | 2 | ||
| Peak pulse current | IPP | 10 | A | Surge current waveform per Figure 1 | 2 | ||
| Peak pulse power | PPK | 30 | W | 2 | |||
| Capacitance | C | 2.5 | 2.5 | pF | VR=0V, f=1MHz | 2 | |
| Peak Pulse Power | PPP | 30 | W | tp = 8/20 μs, Tamb=25°C | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 ESD air discharge | -10 | 10 | KV | air discharge | 1 | ||
| IEC61000-4-2 ESD contact discharge | -15 | 15 | KV | contact discharge | 1 |
CAD (KiCad official)
- Symbol:
HESDLC5VB1AF-A - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesdlc5vb1af-a-etched.step/hesdlc5vb1af-a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesdlc5vb1af-a.step/hesdlc5vb1af-a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
760ab1db92b71a1b, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).