component
HESDLC5V0L2B-TP
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HESDLC5V0L2B-TP
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HESDLC5V0L2B-TP from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection terminal, connected to the protected line, with 5.0 V reverse working voltage and 5.8 V minimum breakdown at 1 mA. |
| 2 | 2 | passive | Bi-directional ESD protection terminal, connected to ground or the return side, with 5.0 V reverse working voltage and 5.8 V minimum breakdown at 1 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 5.8 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 100 | nA | VRWM = 5.0V | 2 | ||
| Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Clamping Voltage | VC | 8.2 | 20 | V | IPP = 9A, tp = 8/20μs | 2 | |
| Junction Capacitance | CJ | 10 | 15 | pF | VR = 0V, f = 1MHz | 2 | |
| Peak Pulse Power | PPP | 90 | W | tp = 8/20μs, Tamb = 25 °C | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 ESD air discharge | -30 | 30 | KV | IEC61000-4-2, air discharge | 1 | ||
| IEC61000-4-2 ESD contact discharge | -30 | 30 | KV | IEC61000-4-2, contact discharge | 1 |
CAD (KiCad official)
- Symbol:
HESDLC5V0L2B-TP - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesdlc5v0l2b-tp-etched.step/hesdlc5v0l2b-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesdlc5v0l2b-tp.step/hesdlc5v0l2b-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
f88f6a7d986a4b43, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HESDLC5V0L2B-TP
**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HESDLC5V0L2B-TP from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection terminal, connected to the protected line, with 5.0 V reverse working voltage and 5.8 V minimum breakdown at 1 mA. |
| 2 | 2 | passive | Bi-directional ESD protection terminal, connected to ground or the return side, with 5.0 V reverse working voltage and 5.8 V minimum breakdown at 1 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 5.8 | | | V | IT = 1mA | 2 |
| Reverse Leakage Current | IR | | | 100 | nA | VRWM = 5.0V | 2 |
| Reverse Working Voltage | VRWM | | | 5 | V | | 2 |
| Clamping Voltage | VC | | 8.2 | 20 | V | IPP = 9A, tp = 8/20μs | 2 |
| Junction Capacitance | CJ | | 10 | 15 | pF | VR = 0V, f = 1MHz | 2 |
| Peak Pulse Power | PPP | | | 90 | W | tp = 8/20μs, Tamb = 25 °C | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Operating Temperature Range | Top | -40 | | 125 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| IEC61000-4-2 ESD air discharge | | -30 | | 30 | KV | IEC61000-4-2, air discharge | 1 |
| IEC61000-4-2 ESD contact discharge | | -30 | | 30 | KV | IEC61000-4-2, contact discharge | 1 |
## CAD (KiCad official)
- Symbol: `HESDLC5V0L2B-TP`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hesdlc5v0l2b-tp-etched.step` / `hesdlc5v0l2b-tp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesdlc5v0l2b-tp.step` / `hesdlc5v0l2b-tp.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hesdlc5v0l2b-tp-datasheet.pdf) (4 pp, sha256 `f88f6a7d986a4b43`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hesdlc5v0l2b-tp-datasheet.pdf)