# HESDL3V3LB-TP

**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HESDL3V3LB-TP from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection line (I/O) protecting one line, 3.3V working voltage, IEC 61000-4-2 ±8kV contact / ±15kV air. |
| 2 | 2 | passive | Second terminal of the bi-directional ESD diode, connected to the other side of the protected line or ground, 3.3V reverse working voltage. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP |  |  | 84 | W | tp = 8/20 μs | 1 |
| IEC61000-4-4 (EFT) current |  |  |  | 40 | A | IEC61000-4-4 (EFT) | 1 |
| ESD air discharge (IEC61000-4-2) |  |  |  | 15 | kV | IEC61000-4-2 air discharge | 1 |
| ESD contact discharge (IEC61000-4-2) |  |  |  | 8 | kV | IEC61000-4-2 contact discharge | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10 s | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| Reverse Breakdown Voltage | VBR | 3.6 |  |  | V | IT = 1 mA | 2 |
| Reverse Working Voltage | VRWM |  |  | 3.3 | V |  | 2 |
| Reverse Leakage Current | IR |  |  | 1 | μA | VRWM = 3.3 V | 2 |
| Clamping Voltage | VC |  |  | 8 | V | IRWM = 1 A, tp = 8/20 μs | 2 |
| Clamping Voltage | VC |  |  | 12 | V | IRWM = 7 A, tp = 8/20 μs | 2 |
| Junction Capacitance | CJ |  |  | 15 | pF | VR = 0 V, f = 1 MHz | 2 |

## CAD (KiCad official)

- Symbol: `HESDL3V3LB-TP`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hesdl3v3lb-tp-etched.step` / `hesdl3v3lb-tp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesdl3v3lb-tp.step` / `hesdl3v3lb-tp.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603009146078056448) (4 pp, sha256 `e7b74436ea3c5ead`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hesdl3v3lb-tp-datasheet.pdf)