component
HESDHD05UFX
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HESDHD05UFX
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HESDHD05UFX from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the unidirectional ESD protection diode for one protected data/control line, with a 5V reverse working voltage (VRWM) and a 6.0V minimum reverse breakdown voltage at 1mA. |
| 2 | 2 | passive | The other terminal of the unidirectional ESD protection diode for the same protected line, with a maximum junction capacitance of 40pF at VR = 0V, f = 1MHz. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse breakdown voltage | VBR | 6 | V | IT = 1mA | 2 | ||
| Reverse leakage current | IR | 1 | μA | VRWM = 5V | 2 | ||
| Clamping voltage | VC | 10 | V | IPP = 5A, tp = 8/20μs | 2 | ||
| Clamping voltage | VC | 25 | V | IPP = 15A, tp = 8/20μs | 2 | ||
| Junction capacitance | CJ | 40 | pF | VR = 0V, f = 1MHz | 2 | ||
| Reverse working voltage | VRWM | 5 | V | 1 | |||
| Peak pulse power | PPP | 300 | W | tp = 8/20μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Operating temperature range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD immunity, contact discharge | -15 | 15 | kV | IEC 61000-4-2 (ESD), contact discharge | 1 | ||
| ESD immunity, air discharge | -15 | 15 | kV | IEC 61000-4-2 (ESD), air discharge | 1 | ||
| EFT immunity | 40 | A | IEC 61000-4-4 (EFT), 5/50 ns | 1 |
CAD (KiCad official)
- Symbol:
HESDHD05UFX - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesdhd05ufx-etched.step/hesdhd05ufx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesdhd05ufx.step/hesdhd05ufx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
1f9129358bd953ec, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HESDHD05UFX
**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HESDHD05UFX from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the unidirectional ESD protection diode for one protected data/control line, with a 5V reverse working voltage (VRWM) and a 6.0V minimum reverse breakdown voltage at 1mA. |
| 2 | 2 | passive | The other terminal of the unidirectional ESD protection diode for the same protected line, with a maximum junction capacitance of 40pF at VR = 0V, f = 1MHz. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse breakdown voltage | VBR | 6 | | | V | IT = 1mA | 2 |
| Reverse leakage current | IR | | | 1 | μA | VRWM = 5V | 2 |
| Clamping voltage | VC | | | 10 | V | IPP = 5A, tp = 8/20μs | 2 |
| Clamping voltage | VC | | | 25 | V | IPP = 15A, tp = 8/20μs | 2 |
| Junction capacitance | CJ | | | 40 | pF | VR = 0V, f = 1MHz | 2 |
| Reverse working voltage | VRWM | | | 5 | V | | 1 |
| Peak pulse power | PPP | | | 300 | W | tp = 8/20μs | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage temperature range | Tstg | -55 | | 150 | °C | | 1 |
| Operating temperature range | Top | -55 | | 150 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| ESD immunity, contact discharge | | -15 | | 15 | kV | IEC 61000-4-2 (ESD), contact discharge | 1 |
| ESD immunity, air discharge | | -15 | | 15 | kV | IEC 61000-4-2 (ESD), air discharge | 1 |
| EFT immunity | | | | 40 | A | IEC 61000-4-4 (EFT), 5/50 ns | 1 |
## CAD (KiCad official)
- Symbol: `HESDHD05UFX`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hesdhd05ufx-etched.step` / `hesdhd05ufx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesdhd05ufx.step` / `hesdhd05ufx.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hesdhd05ufx-datasheet.pdf) (4 pp, sha256 `1f9129358bd953ec`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hesdhd05ufx-datasheet.pdf)