HESDBM3V3A1

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HESDBM3V3A1 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	1	passive	One of the two terminals of the bi-directional ESD protection diode, which clamps the protected line for transient events; the datasheet gives no separate pin name or polarity, and the rated standoff voltage VRWM is 3.3 V.
2	2	passive	The other terminal of the bi-directional ESD protection diode, which is connected to the protected line; the datasheet gives no separate pin name or polarity, and the rated standoff voltage VRWM is 3.3 V.

Key specifications

Parameter	Value
Manufacturer	HXY MOSFET
Package	DFN1006-2L
Category	Circuit Protection
Pins	2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Peak Pulse Power (tp = 8/20 μs)	PPP			100	W	tp = 8/20 μs	1
Maximum lead temperature for soldering	TL			260	°C	during 10s	1
Storage Temperature Range	Tstg	-55		150	°C		1
Maximum junction temperature	Tj			150	°C		1
Top Operating Temperature Range	Top	-55		150	°C		1
IEC61000-4-2 (ESD) air discharge		-30		30	KV	air discharge	1
IEC61000-4-2 (ESD) contact discharge		-30		30	KV	contact discharge	1
IEC61000-4-4 (EFT)				40	A		1
Breakdown voltage	VBR	3.3		5	V	@ IT = 1.0 mA, ambient 25℃ (Note 1)	2
Reverse leakage current	IR			0.05	A	@ VRWM	2
Clamping voltage	VC			11	V	@ MAX IPP (Note 2)	2
Peak pulse current	IPP			6.5	A	(Note 2)	2
Peak pulse power	PPK			100	W	(Note 2)	2
Dynamic resistance	RDYN		0.2		Ω	@ tp = 100 ns (TLP)	2
Capacitance	C		7		pF		2
Reverse working voltage	VRWM		3.3		V		2

CAD (KiCad official)

Symbol: HESDBM3V3A1
Footprint: Diode_SMD:D_SOD-882
3D model: DFN1006-2L (KiCad packages3D, STEP)
3D model files: hesdbm3v3a1-etched.step / hesdbm3v3a1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hesdbm3v3a1.step / hesdbm3v3a1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HXY MOSFET datasheet (4 pp, sha256 ef3331885a3517e2, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# HESDBM3V3A1

**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HESDBM3V3A1 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One of the two terminals of the bi-directional ESD protection diode, which clamps the protected line for transient events; the datasheet gives no separate pin name or polarity, and the rated standoff voltage VRWM is 3.3 V. |
| 2 | 2 | passive | The other terminal of the bi-directional ESD protection diode, which is connected to the protected line; the datasheet gives no separate pin name or polarity, and the rated standoff voltage VRWM is 3.3 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20 μs) | PPP |  |  | 100 | W | tp = 8/20 μs | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| Top Operating Temperature Range | Top | -55 |  | 150 | °C |  | 1 |
| IEC61000-4-2 (ESD) air discharge |  | -30 |  | 30 | KV | air discharge | 1 |
| IEC61000-4-2 (ESD) contact discharge |  | -30 |  | 30 | KV | contact discharge | 1 |
| IEC61000-4-4 (EFT) |  |  |  | 40 | A |  | 1 |
| Breakdown voltage | VBR | 3.3 |  | 5 | V | @ IT = 1.0 mA, ambient 25℃ (Note 1) | 2 |
| Reverse leakage current | IR |  |  | 0.05 | A | @ VRWM | 2 |
| Clamping voltage | VC |  |  | 11 | V | @ MAX IPP (Note 2) | 2 |
| Peak pulse current | IPP |  |  | 6.5 | A | (Note 2) | 2 |
| Peak pulse power | PPK |  |  | 100 | W | (Note 2) | 2 |
| Dynamic resistance | RDYN |  | 0.2 |  | Ω | @ tp = 100 ns (TLP) | 2 |
| Capacitance | C |  | 7 |  | pF |  | 2 |
| Reverse working voltage | VRWM |  | 3.3 |  | V |  | 2 |

## CAD (KiCad official)

- Symbol: `HESDBM3V3A1`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hesdbm3v3a1-etched.step` / `hesdbm3v3a1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesdbm3v3a1.step` / `hesdbm3v3a1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604438650331947008) (4 pp, sha256 `ef3331885a3517e2`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hesdbm3v3a1-datasheet.pdf)