component

HESDBK3V3

Public Made by Adom

by adom

HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentcircuit protectionhesdbk3v3factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 14d ago
viewers hesdbk3v3: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hesdbk3v3-etched.glb Publish 0.1.0 · Ray 14d ago
hesdbk3v3-etched.step hesdbk3v3: factory component page (tier=lcsc) · Ray 14d ago
hesdbk3v3-hero.glb hesdbk3v3: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
hesdbk3v3-hero.overlay.json Publish 0.1.0 · Ray 14d ago
hesdbk3v3.glb Publish 0.1.0 · Ray 14d ago
hesdbk3v3.kicad_mod Publish 0.1.0 · Ray 14d ago
hesdbk3v3.kicad_sym hesdbk3v3: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hesdbk3v3.lbr hesdbk3v3: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hesdbk3v3.step Publish 0.1.0 · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
page.json Set visibility: public · Ray 14d ago
README.md Publish 0.1.0 · Ray 14d ago

HESDBK3V3

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HESDBK3V3 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Bi-directional ESD protection line terminal (VRWM 3.3 V max, IR 0.05 µA max at VRWM, 15 pF typ capacitance) connected to the protected signal line; the diode is bi-directional so it may be used on either terminal.
2 2 passive Second bi-directional ESD protection terminal (VBR 6.5 V typ... see review) connected to ground or the return side; polarity is not specified since the diode is bi-directional.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse stand-off voltage VRWM 3.3 V 2
Breakdown voltage VBR 5 7 V @ IT = 1.0 mA 2
Reverse leakage current IR 0.05 µA @ VRWM 2
Clamping voltage VC 6.5 V @ IPP = 1 A 2
Clamping voltage at max IPP VC 11 V @ MAX IPP 2
Peak pulse current IPP 9 A Surge waveform per Figure 1 2
Peak pulse power PPK 100 W Surge waveform per Figure 1 2
Peak pulse power PPP 100 W tp = 8/20 µs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage temperature range Tstg -55 150 °C 1
Operating temperature range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-2 ESD air discharge -30 30 kV IEC61000-4-2 air discharge 1
IEC61000-4-2 ESD contact discharge -30 30 kV IEC61000-4-2 contact discharge 1
IEC61000-4-4 EFT 40 A IEC61000-4-4 1
Capacitance C 15 pF 2
Dynamic resistance RDYN 0.2 Ω @ tp = 100 ns (TLP) 2

CAD (KiCad official)

  • Symbol: HESDBK3V3
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hesdbk3v3-etched.step / hesdbk3v3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hesdbk3v3.step / hesdbk3v3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 0686bb707238fafc, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF