component
HESDA5V3L
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), SOT-23. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
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HESDA5V3L
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOT-23
HESDA5V3L from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O1 | passive | Protected line 1: one of two steering-diode channels to common pin 3, for two unidirectional lines or one bidirectional line, working voltage 5V. |
| 2 | I/O2 | passive | Protected line 2: second diode channel to common pin 3, for two unidirectional lines or one bidirectional line, working voltage 5V. |
| 3 | COMMON | passive | Common node of both diodes in the circuit diagram, the shared return (ground) for two unidirectional lines; the datasheet gives no further name. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Circuit Protection |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 6 | V | IT = 1mA | 2 | ||
| Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Reverse Leakage Current | IR | 10 | μA | VRWM = 5.0V | 2 | ||
| Clamping Voltage | VC | 9.8 | V | IRWM = 1A, tp = 8/20μs | 2 | ||
| Clamping Voltage | VC | 18 | V | IRWM = 17A, tp = 8/20μs | 2 | ||
| Junction Capacitance | CJ | 180 | 220 | pF | VR = 0V, f = 1MHz | 2 | |
| Maximum lead temperature for soldering | TL | 260 | °C | 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 155 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| IEC61000-4-2 (ESD) air discharge | -30 | 30 | KV | Air discharge | 1 | ||
| IEC61000-4-2 (ESD) contact discharge | -30 | 30 | KV | Contact discharge | 1 | ||
| IEC61000-4-4 (EFT) | 40 | A | 1 |
CAD (KiCad official)
- Symbol:
HESDA5V3L - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hesda5v3l-etched.step/hesda5v3l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesda5v3l.step/hesda5v3l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
50f3ae2c980041d7, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HESDA5V3L
**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · SOT-23
HESDA5V3L from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O1 | passive | Protected line 1: one of two steering-diode channels to common pin 3, for two unidirectional lines or one bidirectional line, working voltage 5V. |
| 2 | I/O2 | passive | Protected line 2: second diode channel to common pin 3, for two unidirectional lines or one bidirectional line, working voltage 5V. |
| 3 | COMMON | passive | Common node of both diodes in the circuit diagram, the shared return (ground) for two unidirectional lines; the datasheet gives no further name. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Circuit Protection |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 6 | | | V | IT = 1mA | 2 |
| Reverse Working Voltage | VRWM | | | 5 | V | | 2 |
| Reverse Leakage Current | IR | | | 10 | μA | VRWM = 5.0V | 2 |
| Clamping Voltage | VC | | | 9.8 | V | IRWM = 1A, tp = 8/20μs | 2 |
| Clamping Voltage | VC | | | 18 | V | IRWM = 17A, tp = 8/20μs | 2 |
| Junction Capacitance | CJ | | 180 | 220 | pF | VR = 0V, f = 1MHz | 2 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 155 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| Operating Temperature Range | Top | -40 | | 125 | °C | | 1 |
| IEC61000-4-2 (ESD) air discharge | | -30 | | 30 | KV | Air discharge | 1 |
| IEC61000-4-2 (ESD) contact discharge | | -30 | | 30 | KV | Contact discharge | 1 |
| IEC61000-4-4 (EFT) | | | | 40 | A | | 1 |
## CAD (KiCad official)
- Symbol: `HESDA5V3L`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `hesda5v3l-etched.step` / `hesda5v3l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesda5v3l.step` / `hesda5v3l.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603008813075214336) (4 pp, sha256 `50f3ae2c980041d7`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hesda5v3l-datasheet.pdf)