component
HESD9B3.3ST5G
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHESD9B3.3ST5G
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HESD9B3.3ST5G from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection diode that protects a single signal line; the datasheet gives no separate function or polarity for this terminal. |
| 2 | 2 | passive | The other terminal of the bidirectional ESD protection diode that protects a single signal line; the datasheet gives no separate function or polarity for this terminal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20μs) | PPPM | 84 | W | tp = 8/20μs | 2 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | 10s | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Operating Temperature Range | TOP | -55 | 150 | °C | 2 | ||
| Maximum junction temperature | Tj | 150 | °C | 2 | |||
| ESD voltage (air discharge) | VESD | 15 | kV | IEC 61000-4-2 (air discharge) | 2 | ||
| ESD voltage (contact discharge) | VESD | 8 | kV | IEC 61000-4-2 (contact discharge) | 2 | ||
| Reverse Working Voltage | VRWM | 3.3 | V | 2 | |||
| Leakage Current | IR | 1 | uA | VRWM=7.0V | 2 | ||
| Clamping Voltage | VC | 8 | V | IPP=1A,Tp=8/20μs | 2 | ||
| Junction Capacitance | CJ | 10 | 15 | pF | VR=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
HESD9B3.3ST5G - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesd9b3-3st5g-etched.step/hesd9b3-3st5g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesd9b3-3st5g.step/hesd9b3-3st5g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
967ee562ef90f40a, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).