component
HESD56181W12-2
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), SOD-323. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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HESD56181W12-2
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · SOD-323
HESD56181W12-2 from HXY MOSFET, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-323 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 13.5 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 1 | μA | VRWM = 12V | 2 | ||
| Clamping Voltage | VC | 14.8 | 15.5 | V | IPP = 30A, tp = 8/20μs | 2 | |
| Clamping Voltage | VC | 19 | 28 | V | IPP = 55A, tp = 8/20μs | 2 | |
| Junction Capacitance | CJ | 450 | pF | VR = 0V, f = 1MHz | 2 | ||
| Reverse Working Voltage | VRWM | 12 | V | 2 | |||
| Peak Pulse Power | PPP | 1540 | W | tp = 8/20μs | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 155 | °C | 1 | ||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| Maximum Junction Temperature | Tj | 150 | °C | 1 | |||
| ESD Immunity (IEC61000-4-2) air discharge | -30 | 30 | kV | IEC61000-4-2, air discharge | 1 | ||
| ESD Immunity (IEC61000-4-2) contact discharge | -30 | 30 | kV | IEC61000-4-2, contact discharge | 1 | ||
| EFT Immunity (IEC61000-4-4) | 40 | A | IEC61000-4-4, 5/50 ns | 1 |
CAD (KiCad official)
- Symbol:
HESD56181W12-2 - Footprint:
Diode_SMD:D_SOD-323 - 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files:
hesd56181w12-2-etched.step/hesd56181w12-2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesd56181w12-2.step/hesd56181w12-2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
6a542d988abdc776, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HESD56181W12-2
**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · SOD-323
HESD56181W12-2 from HXY MOSFET, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-323 |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 13.5 | | | V | IT = 1mA | 2 |
| Reverse Leakage Current | IR | | | 1 | μA | VRWM = 12V | 2 |
| Clamping Voltage | VC | | 14.8 | 15.5 | V | IPP = 30A, tp = 8/20μs | 2 |
| Clamping Voltage | VC | | 19 | 28 | V | IPP = 55A, tp = 8/20μs | 2 |
| Junction Capacitance | CJ | | | 450 | pF | VR = 0V, f = 1MHz | 2 |
| Reverse Working Voltage | VRWM | | | 12 | V | | 2 |
| Peak Pulse Power | PPP | | | 1540 | W | tp = 8/20μs | 1 |
| Maximum Lead Temperature for Soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 155 | °C | | 1 |
| Operating Temperature Range | Top | -40 | | 125 | °C | | 1 |
| Maximum Junction Temperature | Tj | | | 150 | °C | | 1 |
| ESD Immunity (IEC61000-4-2) air discharge | | -30 | | 30 | kV | IEC61000-4-2, air discharge | 1 |
| ESD Immunity (IEC61000-4-2) contact discharge | | -30 | | 30 | kV | IEC61000-4-2, contact discharge | 1 |
| EFT Immunity (IEC61000-4-4) | | | | 40 | A | IEC61000-4-4, 5/50 ns | 1 |
## CAD (KiCad official)
- Symbol: `HESD56181W12-2`
- Footprint: `Diode_SMD:D_SOD-323`
- 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files: `hesd56181w12-2-etched.step` / `hesd56181w12-2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesd56181w12-2.step` / `hesd56181w12-2.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hesd56181w12-2-datasheet.pdf) (5 pp, sha256 `6a542d988abdc776`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hesd56181w12-2-datasheet.pdf)