component
HESD5581N2T5G
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
HESD5581N2T5G
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HESD5581N2T5G from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection line, rated for IEC61000-4-2 Level 4 protection (±25 kV air discharge, ±20 kV contact discharge) with a maximum reverse working voltage VRWM of 3.5 V. |
| 2 | 2 | passive | The other terminal of the bidirectional ESD protection line, with a typical capacitance of 10 pF at 1 MHz (device-level value) and a maximum reverse leakage IR1 of 0.5 µA at VRWM. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
CAD (KiCad official)
- Symbol:
HESD5581N2T5G - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesd5581n2t5g-etched.step/hesd5581n2t5g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesd5581n2t5g.step/hesd5581n2t5g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
2ea51f94258f8804, retrieved 2026-10-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HESD5581N2T5G
**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HESD5581N2T5G from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection line, rated for IEC61000-4-2 Level 4 protection (±25 kV air discharge, ±20 kV contact discharge) with a maximum reverse working voltage VRWM of 3.5 V. |
| 2 | 2 | passive | The other terminal of the bidirectional ESD protection line, with a typical capacitance of 10 pF at 1 MHz (device-level value) and a maximum reverse leakage IR1 of 0.5 µA at VRWM. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## CAD (KiCad official)
- Symbol: `HESD5581N2T5G`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hesd5581n2t5g-etched.step` / `hesd5581n2t5g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesd5581n2t5g.step` / `hesd5581n2t5g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603008975629524992) (4 pp, sha256 `2ea51f94258f8804`, retrieved 2026-10-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hesd5581n2t5g-datasheet.pdf)