component

HESD5471X

Public Made by Adom

by adom

HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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hesd5471x-hero.glb hesd5471x: hero GLB from the etched model (keeps the MPN mark) · Ray 12d ago
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HESD5471X

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HESD5471X from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bidirectional line protected by the HESD5471X, with a minimum reverse breakdown voltage of 6.0 V at 1 mA and a reverse working voltage of 5.0 V. The datasheet does not state which terminal is which.
2 2 passive The other terminal of the bidirectional line protected by the HESD5471X, with a minimum reverse breakdown voltage of 6.0 V at 1 mA and a reverse working voltage of 5.0 V. The datasheet does not state which terminal is which.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage VBR 6 V IT = 1mA 2
Reverse Leakage Current IR 1 µA VRWM = 5.0V 2
Clamping Voltage VC 10 V IPP = 1A, tp = 8/20µs 2
Clamping Voltage VC 15 V IPP = 4.5A, tp = 8/20µs 2
Junction Capacitance CJ 0.38 5 pF VR = 0V, f = 1MHz 2
Peak Pulse Power PPP 75 W tp = 8/20µs 1
Maximum Lead Temperature for Soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum Junction Temperature Tj 150 °C 1
ESD IEC61000-4-2 Air Discharge -25 25 kV IEC61000-4-2 air discharge 1
ESD IEC61000-4-2 Contact Discharge -25 25 kV IEC61000-4-2 contact discharge 1
EFT IEC61000-4-4 40 A IEC61000-4-4 1

CAD (KiCad official)

  • Symbol: HESD5471X
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hesd5471x-etched.step / hesd5471x-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hesd5471x.step / hesd5471x.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 6f8b4204b20eeb01, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF