component

HESD5431N

Public Made by Adom

by adom

HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 24d ago
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hesd5431n-etched.step hesd5431n: factory component page (tier=lcsc) · Ray 24d ago
hesd5431n-hero.glb hesd5431n: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
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hesd5431n.glb Publish 0.1.0 · Ray 24d ago
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hesd5431n.kicad_sym hesd5431n: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hesd5431n.lbr hesd5431n: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hesd5431n.step Publish 0.1.0 · Ray 24d ago
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HESD5431N

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HESD5431N from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bidirectional ESD protection diode protecting a single I/O line, with 3.3V reverse working voltage and 3.6V minimum breakdown at 1mA.
2 2 passive Second terminal of the bidirectional ESD protection diode, which is the other side of the protected line or ground, with 3.3V reverse working voltage and 15pF maximum junction capacitance.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power PPP 84 W tp = 8/20 µs 1
Maximum lead temperature for soldering TL 260 °C during 10 s 1
Storage Temperature Range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
ESD immunity, contact discharge (IEC 61000-4-2) 8 kV IEC61000-4-2 contact discharge 1
ESD immunity, air discharge (IEC 61000-4-2) 15 kV IEC61000-4-2 air discharge 1
EFT immunity (IEC 61000-4-4) 40 A 5/50 ns 1
Reverse Working Voltage VRWM 3.3 V 2
Reverse Breakdown Voltage VBR 3.6 V IT = 1mA 2
Reverse Leakage Current 1 µA VRWM = 3.3V 2
Clamping Voltage 8 V IRWM = 1A, tp = 8/20µs 2
Clamping Voltage 12 V IRWM = 7A, tp = 8/20µs 2
Junction Capacitance CJ 15 pF VR = 0V, f = 1MHz 2

CAD (KiCad official)

  • Symbol: HESD5431N
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hesd5431n-etched.step / hesd5431n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hesd5431n.step / hesd5431n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 0c312f1fdbdb951c, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF