# HESD5411N

**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HESD5411N from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage | VRWM |  |  | 7 | V |  | 2 |
| Reverse leakage current | IR |  |  | 1 | uA | @ VRWM | 2 |
| Breakdown voltage | VBR | 7.2 |  |  | V | @ IT = 1.0 mA, pulse test current (Note 1) | 2 |
| Clamping voltage at IPP = 3 A | VC |  |  | 13 | V | @ IPP = 3 A (surge waveform per Figure 2) | 2 |
| Clamping voltage at max IPP | VC |  |  | 17 | V | @ Max IPP (surge waveform per Figure 2) | 2 |
| Peak pulse current | IPP |  |  | 9 | A | Surge current waveform per Figure 2 | 2 |
| Peak pulse power | PPK |  |  | 153 | W | Surge current waveform per Figure 2 | 2 |
| Line capacitance | C |  | 8 |  | pF |  | 2 |
| Peak pulse power | PPP |  |  | 130 | W | tp = 8/20 μs | 1 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | 10 s | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Operating temperature range | Top | -40 |  | 125 | °C |  | 1 |
| Maximum junction temperature | Tj |  |  | 150 | °C |  | 1 |
| ESD immunity, air discharge |  | -20 |  | 20 | kV | IEC61000-4-2 air discharge | 1 |
| ESD immunity, contact discharge |  | -15 |  | 15 | kV | IEC61000-4-2 contact discharge | 1 |
| EFT immunity |  |  |  | 40 | A | IEC61000-4-4 (EFT) | 1 |

## CAD (KiCad official)

- Symbol: `HESD5411N`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hesd5411n-etched.step` / `hesd5411n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesd5411n.step` / `hesd5411n.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603009026657562624) (4 pp, sha256 `fa71523193148671`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `two-terminal convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hesd5411n-datasheet.pdf)