component
HESD5341N
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHESD5341N
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HESD5341N from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One of the two terminals of the unidirectional ESD protection diode in the DFN1006-2L package; the datasheet text does not state whether this terminal is the anode or cathode. |
| 2 | 2 | passive | The other of the two terminals of the unidirectional ESD protection diode in the DFN1006-2L package, protecting one data or control line; the datasheet text does not state whether this terminal is the anode or cathode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | 60 | W | tp = 8/20 μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Reverse Breakdown Voltage | VBR | 6 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 100 | nA | VRWM = 5V | 2 | ||
| Clamping Voltage | VC | 10 | V | IPP = 1A, tp = 8/20 μs | 2 | ||
| Clamping Voltage | VC | 15 | V | IPP = 4A, tp = 8/20 μs | 2 | ||
| Junction Capacitance | CJ | 0.6 | 0.8 | pF | VR = 0V, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
HESD5341N - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesd5341n-etched.step/hesd5341n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesd5341n.step/hesd5341n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
414f19c7925bde94, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).