component
HESD5311N
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Diode: pin 1 is the cathode (the banded end) by the KiCad diode-footprint convention, KiCad symbol/footprint/3D.
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HESD5311N
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HESD5311N from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 6 | V | IT = 1mA | 2 | ||
| Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Reverse Leakage Current | IR | 100 | nA | VRWM = 5V | 2 | ||
| Clamping Voltage | VC | 10 | V | IRWM = 1A, tp = 8/20us | 2 | ||
| Clamping Voltage | VC | 15 | V | IRWM = 4A, tp = 8/20us | 2 | ||
| Junction Capacitance | CJ | 0.6 | 0.8 | pF | VR = 0V, f = 1MHz | 2 | |
| Peak Pulse Power | PPP | 60 | W | tp = 8/20us | 1 | ||
| IEC 61000-4-4 (EFT) burst current | 40 | A | 5/50 ns | 1 | |||
| IEC 61000-4-2 (ESD) contact discharge | -20 | 20 | kV | contact discharge | 1 | ||
| IEC 61000-4-2 (ESD) air discharge | -20 | 20 | kV | air discharge | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
HESD5311N - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesd5311n-etched.step/hesd5311n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesd5311n.step/hesd5311n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
1d1683c2167ecd16, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HESD5311N
**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HESD5311N from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 6 | | | V | IT = 1mA | 2 |
| Reverse Working Voltage | VRWM | | | 5 | V | | 2 |
| Reverse Leakage Current | IR | | | 100 | nA | VRWM = 5V | 2 |
| Clamping Voltage | VC | | | 10 | V | IRWM = 1A, tp = 8/20us | 2 |
| Clamping Voltage | VC | | | 15 | V | IRWM = 4A, tp = 8/20us | 2 |
| Junction Capacitance | CJ | | 0.6 | 0.8 | pF | VR = 0V, f = 1MHz | 2 |
| Peak Pulse Power | PPP | | | 60 | W | tp = 8/20us | 1 |
| IEC 61000-4-4 (EFT) burst current | | | | 40 | A | 5/50 ns | 1 |
| IEC 61000-4-2 (ESD) contact discharge | | -20 | | 20 | kV | contact discharge | 1 |
| IEC 61000-4-2 (ESD) air discharge | | -20 | | 20 | kV | air discharge | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Operating Temperature Range | Top | -55 | | 150 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `HESD5311N`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hesd5311n-etched.step` / `hesd5311n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hesd5311n.step` / `hesd5311n.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603008794381471744) (5 pp, sha256 `1d1683c2167ecd16`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hesd5311n-datasheet.pdf)