main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers hesd3v3d5-tp: viewers · Ray 7d ago
hesd3v3d5-tp-etched.glb Publish 0.1.0 · Ray 7d ago
hesd3v3d5-tp-etched.step hesd3v3d5-tp: factory component page (tier=lcsc) · Ray 7d ago
hesd3v3d5-tp-hero.glb hesd3v3d5-tp: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
hesd3v3d5-tp-hero.overlay.json Publish 0.1.0 · Ray 7d ago
hesd3v3d5-tp.glb Publish 0.1.0 · Ray 7d ago
hesd3v3d5-tp.kicad_mod Publish 0.1.0 · Ray 7d ago
hesd3v3d5-tp.kicad_sym Publish 0.1.0 · Ray 7d ago
hesd3v3d5-tp.lbr Publish 0.1.0 · Ray 7d ago
hesd3v3d5-tp.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago

HESD3V3D5-TP

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · SOD-523

HESD3V3D5-TP from HXY MOSFET, in a SOD-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOD-523
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Temperature Range Top -40 125 °C 1
Storage Temperature Range Tstg -55 155 °C 1
Maximum junction temperature Tj 150 °C 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
IEC61000-4-2 (ESD) air discharge -30 30 KV IEC61000-4-2 (ESD), air discharge 1
IEC61000-4-2 (ESD) contact discharge -30 30 KV IEC61000-4-2 (ESD), contact discharge 1
IEC61000-4-4 (EFT) 40 A 1
Peak Pulse Power PPP 158 W tp = 8/20 μs 1
Reverse Breakdown Voltage VBR 5 V IT = 1mA 2
Reverse Working Voltage VRWM 3.3 V 2
Reverse Leakage Current IR 900 nA VRWM = 3.3V 2
Junction Capacitance CJ 130 150 pF VR = 0V, f = 1MHz 2
Clamping Voltage VC 14.1 V IPP = 11.2A, tp = 8/20μs 2
Clamping Voltage VC 9.4 V IPP = 5A, tp = 8/20μs 2

CAD (KiCad official)

  • Symbol: HESD3V3D5-TP
  • Footprint: Diode_SMD:D_SOD-523
  • 3D model: SOD-523 (KiCad packages3D, STEP)
  • 3D model files: hesd3v3d5-tp-etched.step / hesd3v3d5-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hesd3v3d5-tp.step / hesd3v3d5-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 f55f88ff9e4050ba, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF