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HE8050G-D-AB3-R

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UTC Unisonic Tech Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HE8050G-D-AB3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-89

HE8050G-D-AB3-R from UTC Unisonic Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the HE8050 NPN transistor; the datasheet gives no pin-specific voltage or current limit for this terminal, and the device-level VEBO is 6 V.
2 C passive Collector terminal of the HE8050 NPN transistor; device ratings are VCEO 25 V, VCBO 40 V, IC 1.5 A, and SOT-89 collector dissipation 500 mW.
3 E passive Emitter terminal of the HE8050 NPN transistor; device ratings are VEBO 6 V and VCEO 25 V, with the datasheet giving no pin-specific limit for this terminal.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Dissipation (SOT-89) PC 500 mW SOT-89 package 2
Collector-Emitter Voltage VCEO 25 V 2
Collector-Base Voltage VCBO 40 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current IC 1.5 A 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -65 150 °C 2
Collector-Base Breakdown Voltage BVCBO 40 V IC=100A, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO 25 V IC=2mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE=100μA, IC=0 2
Collector Cut-Off Current ICBO 100 nA VCB=35V, IE=0 2
Emitter Cut-Off Current IEBO 100 nA VEB=6V, IC=0 2
DC Current Gain hFE1 45 135 VCE=1V, IC=5mA 2
DC Current Gain hFE2 85 160 500 VCE=1V, IC=100mA 2
DC Current Gain hFE3 40 110 VCE=1V, IC=800mA 2
DC Current Gain classification, rank D hFE2 160 300 CLASSIFICATION of hFE2, RANK D 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC=800mA, IB=80mA 2
Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC=800mA, IB=80mA 2
Base-Emitter Saturation Voltage (VBE row) VBE 1 V VCE=1V, IC=10mA 2
Current Gain Bandwidth Product fT 100 MHz VCE=10V, IC=50mA 2
Output Capacitance Cob 9 pF VCB=10V, IE=0, f=1MHz 2
Junction to Case thermal resistance (SOT-89) θJC 40 °C/W SOT-89 package 2

CAD (KiCad official)

  • Symbol: HE8050G-D-AB3-R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: he8050g-d-ab3-r-etched.step / he8050g-d-ab3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); he8050g-d-ab3-r.step / he8050g-d-ab3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256 38a0e040b11749b5, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF