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HE5080E

HEERMICR · Battery Management · ESOP-8

HE5080E from HEERMICR, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VIN power_in 5 V USB or adapter input supply; recommended VDD is 3.44 V to 7.0 V with an absolute maximum of -0.3 V to 8.0 V, and a 1 uF ceramic capacitor should be placed at this pin.
2 AGND power_in Digital ground for the control circuitry.
3 LX input Drain of the internal power MOSFET, connected to the power inductor and Schottky diode, with a voltage rating of -0.3 V to 20 V.
4 VBS power_out Boost output that connects to the boost output and filter capacitors; the pin is rated -0.3 V to 10 V.
5 BAT power_out Charge output to the two-cell series Li-ion battery and a filter capacitor, with a standard float voltage of 8.40 V (8.35 V to 8.425 V) and a rating of -0.3 V to 10 V.
6 ICHG input Charge-current programming pin; a resistor from this pin to ground sets the constant charge current via I_CC = 6800 / R_CS, with a clamp voltage of 1 V in constant-current mode.
7 VSEN input Input-voltage sense and shutdown pin: charge current is reduced when VSEN falls to or below 1.2 V, and charging is shut down when VSEN is below 0.4 V.
8 STAT output Charge status output with an internal open-drain driver for an external indicator LED and current-limiting resistor; the LED stays on while charging and blinks at 1.3 Hz on fault conditions.
9 PGND passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HEERMICR
Package ESOP-8
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage without signal input (VDD) VDD -0.3 8 V 3
LX pin withstand voltage (internal power MOS drain input) LX -0.3 20 V 3
VBS,BAT pin withstand voltage limit VBS,BAT -0.3 10 V 3
Input pin withstand voltage VI -0.3 V 3
Other pin withstand voltage -0.3 6 V 3
Junction operating temperature range TJ -40 150 ℃ 3
Pin temperature (soldering) TSDR 260 ℃ Soldering 10 s 3
Storage temperature range TSTG -65 150 ℃ 3
HBM ESD, human body model HBM -4 4 KV 3
HMM ESD, machine model HMM -4 4 KV 3
Input voltage (recommended) VDD 3.44 7 V 3
Ambient temperature range TA -40 85 ℃ 3
Junction temperature range (recommended) Tj -40 125 ℃ 3
Package thermal resistance, junction to ambient (ESOP8) θJA 40 ℃/W Chip to ambient, ESOP8 package 3
Input supply voltage VIN 3.6 5 7 V 4
Charging float voltage VCV 8.35 8.4 8.425 V 4
Battery overvoltage protection voltage at BAT pin VOVPB 8.8 V 4
Constant-current mode charge current ICC 1000 mA RICHG=6.8K,VIN=5V 4
Trickle-mode charge current ITC 120 mA 4
Short-circuit mode charge current IBS 55 mA 4
Termination charge current ITERM 150 mA 4
Current amplification ratio AI 6800 AI=ICC/IICHG 4
ICHG pin constant-current mode clamp voltage VICHG 1 V 4
VSEN current-limit threshold voltage VVSEN 1.2 V 4
Thermal protection temperature TSD 140 ℃ 4
Thermal protection reset hysteresis △T 30 ℃ 4
Chip quiescent current IDD 1 mA No battery 4
Input undervoltage lockout threshold (VIN falling) VUVLO 3.45 V VIN下降 4
Undervoltage lockout reset hysteresis △VUVLO 100 mV 4
Input overvoltage protection threshold (VIN rising) VOVP 6.23 V VIN上升保护后下降 4
Overvoltage protection reset hysteresis △VOVP 500 mV 4
Recharge threshold voltage △VRCH 200 mV 4
Trickle-to-constant-current transition voltage VTRK 5.6 V 4
Battery short-circuit threshold VSHORT 2 V 4
BLOCK tube fully-on voltage VTRON 170 mV VBAT>VTRK, VTRON=VBAT‐VIN 4
Switching frequency FSW 600 Khz 4
Switching NMOS on-resistance RNFET 80 mΩ 4
BLOCK PMOS on-resistance RPFET 120 mΩ 4
VSEN shutdown logic high level VENH 0.6 V 4
VSEN shutdown logic low level VENL 0.4 V 4
Chip shutdown current ISD 10 uA VBAT>VIN 4
Chip shutdown current ISD 11 uA 0.6V<VBAT<VIN 4
Chip shutdown current ISD 8 uA VBAT<0.6V 4
Battery leakage current IBAT 22 uA 充电完成 4
Battery leakage current IBAT 3.8 uA 关断芯片 VBAT=8.4V 4
Battery leakage current IBAT 0.02 uA VIN=0V 4

CAD (KiCad official)

  • Symbol: HE5080E
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm
  • 3D model: ESOP-8 (KiCad packages3D, STEP)
  • 3D model files: he5080e-etched.step / he5080e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); he5080e.step / he5080e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HEERMICR datasheet (7 pp, sha256 063ce630ed2716bb, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF