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HE4056E

HEERMICR · Battery Management · ESOP-8

HE4056E from HEERMICR, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 TEMP input Battery temperature sense input for an NTC in the battery pack; charging is suspended if TEMP is below 45% or above 80% of VCC, and TEMP must be tied to GND when the function is unused, never left floating.
2 PROG passive Charge current set and monitor pin; a resistor RPROG from this pin to GND sets the charge current, with PROG regulated to 0.1V in precharge mode and 1V in constant-current mode.
3 GND power_in Ground.
4 VCC power_in Input supply; when VCC falls to 80mV below the BAT pin voltage the chip enters low-power sleep mode with BAT leakage below 2uA, and at least a 1uF bypass capacitor is required on VCC.
5 BAT power_out Charge output to the positive battery terminal, supplying charge current and a regulated 4.2V limit; BAT leakage is reduced below 2uA in shutdown or sleep mode.
6 /STDBY output Open-drain output pulled low by an internal switch to indicate that charging has terminated (battery full); otherwise high impedance.
7 /CHRG output Open-drain charge status output pulled low by an internal switch during a charge cycle; otherwise high impedance.
8 CE input Chip enable input: pulling high enables operation and pulling low enters shutdown; it can be driven by TTL or CMOS logic levels.
9 GND power_in Exposed thermal pad for heat dissipation, to be connected to ground.

Key specifications

Parameter Value
Manufacturer HEERMICR
Package ESOP-8
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage (VCC) Vcc 4 5 6.5 V 4
UVLO threshold (VCC rising) VUV 3.5 3.7 3.9 V VCC 上升 4
UVLO hysteresis VUV_HYS 150 200 300 mV 4
Supply current, charge mode ICC-IBAT 150 500 uA RPROG =1.3K 4
Supply current, standby mode (charge terminated) ICC-IBAT 55 100 uA 4
Supply current, shutdown mode ICC-IBAT 55 100 uA RPROG 悬空,VCC<VBAT或 VCC < VUV 4
Output control voltage (float) VFLOAT 4.158 4.2 4.242 V 0℃<Ta<85℃,IBAT=40mA 4
BAT current, constant-current mode (RPROG=2.6K) IBAT 455 480 505 mA RPROG =2.6K,CC mode 4
BAT current, constant-current mode (RPROG=1.3K) IBAT 910 960 1010 mA RPROG =1.3K,CC mode 4
BAT current, standby mode IBAT 0 -2.5 -6 uA 待机模式,VBAT=4.2V 4
BAT leakage current, shutdown mode (first ± column) -1 1 uA RPROG悬空,VCC<VBAT or VCC < VUV 5
BAT leakage current, shutdown mode (second ± column) -2 2 uA RPROG悬空,VCC<VBAT or VCC < VUV 5
BAT current, sleep mode -1 -2 uA VCC=0V 5
Trickle-charge current ITRIKL 90 96 101 mA VBAT<Vtrikl, RPROG=1.3k 5
Trickle-charge threshold voltage (VBAT rising) VTRIKL 2.8 2.9 3 V RPROG =1.3K,VBAT 上升 5
VCC-VBAT stop-working threshold (VCC rising) VASD 100 140 180 mV VCC 上升 5
VCC-VBAT stop-working threshold (VCC falling) VASD 50 80 110 mV VCC 下降 5
C/10 termination current (RPROG=2.6K) ITERM 45 48 50 mA RPROG=2.6K 5
C/10 termination current (RPROG=1.3K) ITERM 90 95 100 mA RPROG=1.3K 5
PROG pin voltage VPROG 0.93 1 1.07 V RPROG =1.3k, CC mode 5
/CHRG minimum output (low) voltage V/CHRG 0.35 0.6 V I/CHRG=5mA 5
/STDBY minimum output (low) voltage V/STDBY 0.35 0.6 V I/STDBY =5mA 5
Battery recharge hysteresis voltage ΔVRECG 120 180 240 mV RPROG =2k, VFLOAT - VRECHRG 5
TEMP pin high-temperature voltage VTEMP-H 80 83 %VCC 5
TEMP pin low-temperature voltage VTEMP-L 42 45 %VCC 5
Overtemperature protection temperature TLIM 145 ℃ 5
Internal MOSFET on-resistance RDS(ON) 650 mΏ 5
Soft-start time TSS 20 uS IBAT=0 to IBAT=1300V/RPROG 5
Recharge comparator filter time (VBAT falling) TRECHARGE 0.8 1.8 4 mS VBAT 下降 5
Termination comparator filter time TTEMP 0.8 1.8 4 mS IBAT低于ICHG/10 5
PROG pin pull-up current IPROG 3 uA 5
VCC pin withstand voltage VCC -0.3 8 V 4
PROG pin withstand voltage VPROG -0.3 V 4
BAT pin withstand voltage VBAT -0.3 7 V 4
TEMP pin withstand voltage VTEMP -0.3 10 V 4
/STDBY pin withstand voltage VSTDBY -0.3 10 V 4
CE pin withstand voltage VCE -0.3 10 V 4
/CHRG pin withstand voltage VCHRG -0.3 10 V 4
BAT pin current IBAT 1200 mA 4
PROG pin current IPROG 1200 uA 4
ESD HBM rating 2000 V 4
Operating temperature range TOP -25 85 ℃ 4
Storage temperature range TSTG -60 125 ℃ 4

CAD (KiCad official)

  • Symbol: HE4056E
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm
  • 3D model: ESOP-8 (KiCad packages3D, STEP)
  • 3D model files: he4056e-etched.step / he4056e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); he4056e.step / he4056e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HEERMICR datasheet (10 pp, sha256 58ec47a830fef5fc, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF