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Ray Publish 0.1.0 7c5129f 26d ago

HDESD3V3E1BL-7B

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HDESD3V3E1BL-7B from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the single bi-directional line this ESD protection device clamps; the datasheet gives no polarity for this terminal because the device is bi-directional.
2 2 passive The other terminal of the single bi-directional line this ESD protection device clamps; the datasheet gives no polarity for this terminal because the device is bi-directional.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Breakdown voltage (min) VBR 5 V @ IT (Note 1) 2
Breakdown voltage (max) VBR 7 V @ IT (Note 1) 2
Reverse standoff voltage VRWM 3.3 V 2
Reverse leakage current IR 0.05 A @ VRWM 2
Clamping voltage at max IPP VC 11 V @MAX IPP (Note 2) 2
Peak pulse current IPP 6.5 A (Note 2) 2
Peak pulse power PPK 100 W (Note 2) 2
Peak pulse power (absolute) PPP 100 W tp = 8/20 μs 1
Maximum lead temperature for soldering TL 260 °C 10 s 1
Storage temperature range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
Operating temperature range Top -55 150 °C 1
ESD IEC61000-4-2 air discharge -30 30 kV IEC61000-4-2 air discharge 1
ESD IEC61000-4-2 contact discharge -30 30 kV IEC61000-4-2 contact discharge 1
EFT current IEC61000-4-4 40 A IEC61000-4-4 (EFT) 1
Diode capacitance C 15 pF 2
Dynamic resistance (TLP) RDYN 0.2 Ω @tp=100 ns (TLP) 2

CAD (KiCad official)

  • Symbol: HDESD3V3E1BL-7B
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hdesd3v3e1bl-7b-etched.step / hdesd3v3e1bl-7b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hdesd3v3e1bl-7b.step / hdesd3v3e1bl-7b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 e01dc331f8e1ce75, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF