component
HDESD12VL2BTQ-7
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| hdesd12vl2btq-7-etched.glb | 13d ago |
| hdesd12vl2btq-7-etched.step | 13d ago |
| hdesd12vl2btq-7-hero.glb | 13d ago |
| hdesd12vl2btq-7-hero.overlay.json | 13d ago |
| hdesd12vl2btq-7.glb | 13d ago |
| hdesd12vl2btq-7.kicad_mod | 13d ago |
| hdesd12vl2btq-7.kicad_sym | 13d ago |
| hdesd12vl2btq-7.lbr | 13d ago |
| hdesd12vl2btq-7.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
HDESD12VL2BTQ-7
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · SOT-23
HDESD12VL2BTQ-7 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Diode terminal 1 in the circuit diagram, connected through one TVS diode to common pin 3; the datasheet gives no signal name for it. |
| 2 | 2 | passive | Diode terminal 2 in the circuit diagram, connected through the second TVS diode to common pin 3; the datasheet gives no signal name for it. |
| 3 | 3 | passive | Common node in the circuit diagram, joining the two TVS diodes; the datasheet gives no signal name for it. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Circuit Protection |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power (tp = 8/20 µs) | PPP | 400 | W | tp = 8/20µs, Tamb = 25°C | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10 s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Operating temperature range | Top | -55 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD immunity, air discharge | -30 | 30 | kV | IEC61000-4-2 air discharge | 1 | ||
| ESD immunity, contact discharge | -30 | 30 | kV | IEC61000-4-2 contact discharge | 1 | ||
| EFT current | 15 | A | IEC61000-4-4 (EFT) | 1 | |||
| Reverse stand-off voltage | VRWM | 12 | V | Device table row for HDESD12VL2BTQ-7 | 2 | ||
| Reverse leakage current at VRWM | IR | 0.5 | A | @ VRWM, Max column | 2 | ||
| Clamping voltage at maximum IPP | VC | 27 | V | @ MAX IPP (Note 2) | 2 | ||
| Peak pulse current | IPP | 18 | A | Surge current waveform per Figure 1 (Note 2) | 2 | ||
| Peak pulse power (table) | PPK | 400 | W | Surge current waveform per Figure 1 (Note 2) | 2 |
CAD (KiCad official)
- Symbol:
HDESD12VL2BTQ-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hdesd12vl2btq-7-etched.step/hdesd12vl2btq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hdesd12vl2btq-7.step/hdesd12vl2btq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
e399ce44197e4f39, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).