# HD7258

**HXY MOSFET** · MOSFETs · TO252-2L

HD7258 from HXY MOSFET, in a TO252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for VGS of ±20V maximum with a threshold of 1.3V to 2.5V. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 100V with 30A continuous drain current at TC=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, with continuous source (body diode) current up to 22A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V | Tc=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | Tc=25℃ | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 30 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 13.5 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TA=25℃ |  |  | 4.2 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TA=70℃ |  |  | 3.4 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 45 | A | Tc=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 36.5 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=27A | 1 |
| Avalanche Current | IAS |  |  | 27 | A | Tc=25℃ | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 52.1 | W |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 2 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 62 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 2.4 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V , ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 35 | 43 | mΩ | VGS=10V , ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 40 | 50 | mΩ | VGS=4.5V , ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.3 |  | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | uA | VDS=80V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 100 | uA | VDS=80V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Gate Resistance | Rg |  | 1.6 | 3.2 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 |
| Total Gate Charge (10V) | Qg |  | 60 | 84 | nC | VDS=80V , VGS=10V , ID=20A | 2 |
| Gate-Source Charge | Qgs |  | 9.7 | 14 | nC | VDS=80V , VGS=10V , ID=20A | 2 |
| Gate-Drain Charge | Qgd |  | 11.8 | 16.5 | nC | VDS=80V , VGS=10V , ID=20A | 2 |
| Turn-On Delay Time | Td(on) |  | 10.4 | 21 | ns | VDD=50V , VGS=10V , RG=3.3 , ID=20A | 2 |
| Rise Time | Tr |  | 46 | 83 | ns | VDD=50V , VGS=10V , RG=3.3 , ID=20A | 2 |
| Turn-Off Delay Time | Td(off) |  | 54 | 108 | ns | VDD=50V , VGS=10V , RG=3.3 , ID=20A | 2 |
| Fall Time | Tf |  | 10 | 20 | ns | VDD=50V , VGS=10V , RG=3.3 , ID=20A | 2 |
| Input Capacitance | Ciss |  | 3848 | 5387 | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| Output Capacitance | Coss |  | 137 | 192 | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 82 | 115 | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| Continuous Source Current | IS |  |  | 22 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 45 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | 0.098 |  | V/℃ | Reference to 25℃ , ID=1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | -5.52 |  | mV/℃ |  | 2 |
| Forward Transconductance | gfs |  | 28.7 |  | S | VDS=5V , ID=20A | 2 |
| Reverse Recovery Time | trr |  | 30 |  | nS | IF=20A , dI/dt=100A/µs , TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  | 37 |  | nC | IF=20A , dI/dt=100A/µs , TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HD7258`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO252-2L (KiCad packages3D, STEP)
- 3D model files: `hd7258-etched.step` / `hd7258-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hd7258.step` / `hd7258.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hd7258-datasheet.pdf) (6 pp, sha256 `afe559ab7e0ed88e`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hd7258-datasheet.pdf)