component
HD5V0L1B2LP4-7B
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HD5V0L1B2LP4-7B
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HD5V0L1B2LP4-7B from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode, connected to the protected I/O line (reverse working voltage 5.0 V, breakdown 5.6 V at 1 mA). |
| 2 | 2 | passive | Second terminal of the bi-directional ESD protection diode, connected to the protected I/O line or ground return (reverse working voltage 5.0 V, breakdown 5.6 V at 1 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20 μs) | PPP | 675 | W | tp = 8/20 μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 (ESD) contact discharge | -30 | 30 | KV | Contact discharge | 1 | ||
| IEC61000-4-2 (ESD) air discharge | -30 | 30 | KV | Air discharge | 1 | ||
| IEC61000-4-4 (EFT) current | 40 | A | 1 | ||||
| Reverse Breakdown Voltage | VBR | 5.6 | V | IT = 1mA | 2 | ||
| Reverse Leakage Current | IR | 1 | μA | VRWM = 5.0V | 2 | ||
| Reverse Working Voltage | VRWM | 5 | V | 2 |
CAD (KiCad official)
- Symbol:
HD5V0L1B2LP4-7B - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hd5v0l1b2lp4-7b-etched.step/hd5v0l1b2lp4-7b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hd5v0l1b2lp4-7b.step/hd5v0l1b2lp4-7b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
d89a8c5652f44525, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HD5V0L1B2LP4-7B
**HXY MOSFET** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HD5V0L1B2LP4-7B from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode, connected to the protected I/O line (reverse working voltage 5.0 V, breakdown 5.6 V at 1 mA). |
| 2 | 2 | passive | Second terminal of the bi-directional ESD protection diode, connected to the protected I/O line or ground return (reverse working voltage 5.0 V, breakdown 5.6 V at 1 mA). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20 μs) | PPP | | | 675 | W | tp = 8/20 μs | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Operating Temperature Range | Top | -55 | | 150 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| IEC61000-4-2 (ESD) contact discharge | | -30 | | 30 | KV | Contact discharge | 1 |
| IEC61000-4-2 (ESD) air discharge | | -30 | | 30 | KV | Air discharge | 1 |
| IEC61000-4-4 (EFT) current | | | | 40 | A | | 1 |
| Reverse Breakdown Voltage | VBR | 5.6 | | | V | IT = 1mA | 2 |
| Reverse Leakage Current | IR | | | 1 | μA | VRWM = 5.0V | 2 |
| Reverse Working Voltage | VRWM | | | 5 | V | | 2 |
## CAD (KiCad official)
- Symbol: `HD5V0L1B2LP4-7B`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `hd5v0l1b2lp4-7b-etched.step` / `hd5v0l1b2lp4-7b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hd5v0l1b2lp4-7b.step` / `hd5v0l1b2lp4-7b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603008983851036672) (4 pp, sha256 `d89a8c5652f44525`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hd5v0l1b2lp4-7b-datasheet.pdf)