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Contents

README

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HD2307

High Diode · MOSFETs · SOT-23

HD2307 from High Diode, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a threshold of -1 V to -3 V at ID = -250 µA.
2 S passive Source of the P-channel MOSFET, with a continuous source-drain current rating of -0.91 A.
3 D passive Drain of the P-channel MOSFET, with a drain-source voltage rating of -30 V and a continuous drain current of -2.7 A.

Key specifications

Parameter Value
Manufacturer High Diode
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0V, ID =-250µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS =VGS, ID =-250µA 2
Gate-Source Leakage IGSS -100 100 nA VDS =0V, VGS =±20V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS =-30V, VGS =0V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS =-30V, VGS =0V, TJ=55℃ 2
Drain-Source On-State Resistance RDS(on) 0.11 0.138 Ω VGS =-4.5V, ID =-2.5A 2
Drain-Source On-State Resistance RDS(on) 0.073 0.088 Ω VGS =-10V, ID =-3.5A 2
Total Gate Charge Qg 4.1 6.2 nC VDS =-15V,VGS =-4.5V, ID =-2.5A 2
Turn-On Delay Time td(on) 40 60 ns VDD=-15V, RL=15Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω 2
Rise Time tr 40 60 ns VDD=-15V, RL=15Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω 2
Turn-Off Delay Time td(off) 20 40 ns VDD=-15V, RL=15Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω 2
Fall Time tf 17 30 ns VDD=-15V, RL=15Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω 2
Body Diode Voltage VSD -0.8 -1.2 V IS=-0.75A, VGS =0 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -2.7 A 1
Continuous Source-Drain Current IS -0.91 A 1
Power Dissipation PD 1.1 W 1
Thermal Resistance from Junction to Ambient RθJA 114 ℃/W t≤5s 1
Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Forward Transconductance gfs 7 S VDS =-10V, ID =-3.5A 2
Input Capacitance Ciss 340 pF VDS =-15V,VGS =0V,f =1MHz 2
Output Capacitance Coss 67 pF VDS =-15V,VGS =0V,f =1MHz 2
Reverse Transfer Capacitance Crss 51 pF VDS =-15V,VGS =0V,f =1MHz 2
Gate-Source Charge Qgs 1.3 nC VDS =-15V,VGS =-4.5V, ID =-2.5A 2
Gate-Drain Charge Qgd 1.8 nC VDS =-15V,VGS =-4.5V, ID =-2.5A 2
Gate Resistance Rg 10 Ω f =1MHz 2

CAD (KiCad official)

  • Symbol: HD2307
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hd2307-etched.step / hd2307-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hd2307.step / hd2307.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: High Diode datasheet (5 pp, sha256 915a6d97fe358464, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF