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HD2305

Public Made by Adom

by adom

High Diode MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HD2305

High Diode · MOSFETs · SOT-23

HD2305 from High Diode, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±8 V, with threshold VGS(th) of -0.5 V min to -0.9 V max at ID=-250µA.
2 S passive Source; continuous source-drain diode current is -0.8 A (IS, absolute maximum rating).
3 D passive Drain; drain-source voltage rated -12 V and continuous drain current -4.1 A.

Key specifications

Parameter Value
Manufacturer High Diode
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS -12 V VGS = 0V, ID =-250µA 2
Gate-source threshold voltage VGS(th) -0.5 -0.9 V VDS =VGS, ID =-250µA 2
Gate-source leakage IGSS -100 100 nA VDS =0V, VGS =±8V 2
Zero gate voltage drain current IDSS -1 µA VDS =-8V, VGS =0V 2
Drain-source on-state resistance RDS(on) 30 45 mΩ VGS =-4.5V, ID =-3.5A 2
Drain-source on-state resistance RDS(on) 40 60 mΩ VGS =-2.5V, ID =-3A 2
Drain-source on-state resistance RDS(on) 60 90 mΩ VGS =-1.8V,ID=-2.0A 2
Forward transconductance gfs 6 S VDS =-5V, ID =-4.1A 2
Total gate charge Qg 7.8 15 nC VDS =-4V,VGS =-4.5V, ID =-4.1A 2
Total gate charge Qg 4.5 9 nC VDS =-4V,VGS =-2.5V, ID =-4.1A 2
Gate resistance Rg 1.4 7 14 Ω f =1MHz 2
Turn-on delay time td(on) 13 20 ns VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω 2
Rise time tr 35 53 ns VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω 2
Turn-off delay time td(off) 32 48 ns VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω 2
Fall time tf 10 20 ns VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω 2
Turn-on delay time td(on) 5 10 ns VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω 2
Rise time tr 11 17 ns VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω 2
Turn-off delay time td(off) 22 33 ns VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω 2
Fall time tf 16 24 ns VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω 2
Continuous source-drain diode current IS -1.4 A TC=25℃ 2
Pulse diode forward current ISM -10 A Pulse Width ≤300µs, Duty Cycle ≤2% 2
Body diode voltage VSD -1.2 V IF=-3.3A 2
Drain-source voltage VDS -12 V 1
Gate-source voltage VGS -8 8 V 1
Continuous drain current ID -4.1 A 1
Continuous source-drain diode current IS -0.8 A 1
Maximum power dissipation PD 0.35 W 1
Junction temperature TJ 150 ℃ 1
Storage temperature TSTG -50 150 ℃ 1
Thermal resistance from junction to ambient RθJA 357 ℃/W t≤10s 1

CAD (KiCad official)

  • Symbol: HD2305
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hd2305-etched.step / hd2305-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hd2305.step / hd2305.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: High Diode datasheet (5 pp, sha256 80cb17e5b1b43179, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF