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HCSD19533Q5A

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HXY MOSFET MOSFETs, DFN-8L(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HCSD19533Q5A

HXY MOSFET · MOSFETs · DFN-8L(5x6)

HCSD19533Q5A from HXY MOSFET, in a DFN-8L(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated 75 A.
2 S passive Source terminal of the N-channel MOSFET, tied with pins 1 and 3; continuous drain current is rated 75 A.
3 S passive Source terminal of the N-channel MOSFET, tied with pins 1 and 2; continuous drain current is rated 75 A.
4 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V with threshold 1.0 to 2.5 V.
5 D passive Drain terminal, tied with pins 6 to 8; drain-source voltage is rated 100 V.
6 D passive Drain terminal, tied with pins 5, 7 and 8; drain-source voltage is rated 100 V.
7 D passive Drain terminal, tied with pins 5, 6 and 8; drain-source voltage is rated 100 V.
8 D passive Drain terminal, tied with pins 5 to 7; drain-source voltage is rated 100 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN-8L(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 9.2 11.4 mΩ VGS=4.5V, ID=8A 2
Maximum Continuous Drain to Source Diode Forward Current IS 75 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 300 A 2
Drain to Source Diode Forward Voltage VSD 1 V VGS=0V, IS=30A 2
Drain source voltage VDS 100 V Tj=25℃ 1
Gate source voltage VGS -20 20 V Tj=25℃ 1
Continuous drain current ID 75 A Tj=25℃ 1
Pulsed drain current ID, pulse 300 A Tj=25℃ 1
Power dissipation PD 97 W Tj=25℃ 1
Single pulsed avalanche energy EAS 90 mJ Tj=25℃ 1
Operation and storage temperature Tstg, Tj -55 150 ℃ 1
Thermal resistance, junction-case RθJC 1.3 °C/W 1
Static Drain-Source on-Resistance RDS(on) 6.4 mΩ VGS=10V, ID=20A 2
Input Capacitance Ciss 2944 pF VDS=50V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 736 pF VDS=50V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 2.04 pF VDS=50V, VGS=0V, f=1.0MHz 2

CAD (KiCad official)

  • Symbol: HCSD19533Q5A
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8L(5x6) (KiCad packages3D, STEP)
  • 3D model files: hcsd19533q5a-etched.step / hcsd19533q5a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hcsd19533q5a.step / hcsd19533q5a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 51f4e53916ab0708, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF