# HCJU30P10

**HXY MOSFET** · MOSFETs · TO-252-2L

HCJU30P10 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with a threshold of -1 V min to -2.5 V max at ID=-250μA. |
| 2 | D | passive | Drain, the exposed tab (the middle lead is trimmed in this 2-lead package); VDS is rated -100 V and continuous ID -30 A at TC=25℃. |
| 3 | S | passive | Source; body-diode continuous current is -30 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -30 | A | TC=25℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | -120 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 107 | W | TC=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | ℃ |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 175 | ℃ |  | 1 |
| Avalanche energy | EAS |  |  | 361 | mJ | Note 2: TJ=25℃, VDD=50V, VG=-10V, Rg=25Ω, L=0.5mH | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 1.4 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -100 | -127 |  | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-100V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 46 | 57.5 | mΩ | VGS=-10V, ID=-15A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 48 | 63 | mΩ | VGS=-4.5V, ID=-10A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | -30 | A |  | 2 |
| Forward on Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-15A | 2 |

## CAD (KiCad official)

- Symbol: `HCJU30P10`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `hcju30p10-etched.step` / `hcju30p10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hcju30p10.step` / `hcju30p10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/hcju30p10-datasheet.pdf) (7 pp, sha256 `b336649cc147680f`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hcju30p10-datasheet.pdf)